Investigation on Schottky-Barrier MOSFETs for Memory Application: Schottky-Barrier Flash Memory - Couverture souple

Choi, Sung-Jin; Choi, Yang-Kyu

 
9783843377478: Investigation on Schottky-Barrier MOSFETs for Memory Application: Schottky-Barrier Flash Memory
Couverture souple
ISBN 10 : 3843377472 ISBN 13 : 9783843377478
Editeur : LAP LAMBERT Academic Publishing, 2010

Synopsis

The structure of Schottky-barrier (SB) MOSFETs was investigated for both the perspective of practical applications and interest in novel Flash memory. We demonstrated how the source-side injection of hot electrons in the dopant-segregated SB (DSSB) Flash memory cell achieves high-speed, low-voltage programming with excellent injection efficiency, and no constraints on the optimization of gate and drain voltages. Moreover, the drain disturbance-free phenomenon in NOR Flash architecture was achieved. Excellent programming efficiency, especially, was achieved in a DSSB Flash device with a narrow fin width due to an enhanced lateral electric field without any sacrifice of parasitic resistance. Thus, the DSSB device can be a promising candidate in NOR Flash memory for attaining a lower programming voltage and power consumption.

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Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2010
Langue
anglais
ISBN 10 
3843377472
ISBN 13 
9783843377478
Reliure
Broché
Nombre de pages
100
Coordonnées du fabricant
non disponible
Personne responsable
KreGa Onlinehandel GmbH
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