High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
I, Dr. S.V. Jagadeesh Chandra published 18 scientific papers on challenges in the improvement of interface quality at high-k/semiconductor stack for microelectronic device applications. I got my doctorate under the guidance of Prof.Uthanna and Prof.Mohan Rao. Now I am working with Prof.C.J.Choi, SPRC, Chonbuk NationalUniversity, Korea.
I, Dr. S.V. Jagadeesh Chandra published 18 scientific papers on challenges in the improvement of interface quality at high-k/semiconductor stack for microelectronic device applications. I got my doctorate under the guidance of Prof.Uthanna and Prof.Mohan Rao. Now I am working with Prof.C.J.Choi, SPRC, Chonbuk NationalUniversity, Korea.
I, Dr. S.V. Jagadeesh Chandra published 18 scientific papers on challenges in the improvement of interface quality at high-k/semiconductor stack for microelectronic device applications. I got my doctorate under the guidance of Prof.Uthanna and Prof.Mohan Rao. Now I am working with Prof.C.J.Choi, SPRC, Chonbuk NationalUniversity, Korea.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. 188 pp. Englisch. N° de réf. du vendeur 9783843394222
Quantité disponible : 2 disponible(s)
Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Jagadeesh Chandra S. V.I, Dr. S.V. Jagadeesh Chandra published 18 scientific papers on challenges in the improvement of interface quality at high-k/semiconductor stack for microelectronic device applications. I got my doctorate unde. N° de réf. du vendeur 5469229
Quantité disponible : Plus de 20 disponibles
Vendeur : Books Puddle, New York, NY, Etats-Unis
Etat : New. pp. 188. N° de réf. du vendeur 26128861863
Quantité disponible : 4 disponible(s)
Vendeur : Majestic Books, Hounslow, Royaume-Uni
Etat : New. Print on Demand pp. 188 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam. N° de réf. du vendeur 131725688
Quantité disponible : 4 disponible(s)
Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne
Etat : New. PRINT ON DEMAND pp. 188. N° de réf. du vendeur 18128861869
Quantité disponible : 4 disponible(s)
Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. INVESTIGATIONS ON MAGNETRON SPUTTERED TANTALUM OXIDE FILMS | Microelectronic device applications | S. V. Jagadeesh Chandra (u. a.) | Taschenbuch | 188 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783843394222 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. N° de réf. du vendeur 107133592
Quantité disponible : 5 disponible(s)
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 188 pp. Englisch. N° de réf. du vendeur 9783843394222
Quantité disponible : 1 disponible(s)
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - High permittivity dielectrics are studied intensively in the view of their use in the integrated circuits. However, the real emergence of tantalum oxide (Ta2O5) as a dielectric material happened due to its high-dielectric constant, chemical and thermal stability with the promise of compatibility in microelectronic processing. This book covenants with the optimized deposition conditions of Ta2O5 films formed on quartz and p-type Si substrates using dc and rf reactive magnetron sputtering method for structural and optical studies. Further, aluminum metal deposited as a top electrode on Ta2O5 and Si stack to prepare metal oxide semiconductor device for investigating electrical and dielectric properties. The possible ways for depositing good quality Ta2O5 layers on Si, to obtain high dielectric constant explained in this book are quite useful to prepare high quality metal oxide semiconductor device for capacitor applications. N° de réf. du vendeur 9783843394222
Quantité disponible : 1 disponible(s)
Vendeur : Mispah books, Redhill, SURRE, Royaume-Uni
Paperback. Etat : Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N° de réf. du vendeur ERICA79038433942296
Quantité disponible : 1 disponible(s)