THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM): Semiconductor memory - Couverture souple

KARANJA, JOSEPH

 
9783844301472: THE SCIENCE OF PHASE CHANGE RANDOM ACCESS MEMORIES (PCRAM): Semiconductor memory
Couverture souple
ISBN 10 : 384430147X ISBN 13 : 9783844301472
Editeur : LAP LAMBERT Academic Publishing, 2011

Synopsis

Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

Phase Change Random Access Memory (PCM) is one of the most optimized candidates for the next generation non-volatile memory due to its fast operation speed, high scalability, low power operation and fabrication costs. The transition from the amorphous to the crystalline phase is induced by heating the material above its crystallization temperature for a long enough time, and the switching back to the amorphous phase is realized by melting and quenching the material fast enough that it solidifies in the amorphous state. In this book the electrical and optical properties of various tin selenide compound alloys has been reported. All the alloys have shown high sheet resistance at room temperature and low sheet resistance during annealing. This interprets that the samples were amorphous during deposition and changed to crystalline during annealing. Increase in tin concentration reduced the crystallization temperature. The PCM was fabricated had high crystalline temperature, low crystallization temperature and a wide band gap.

Biographie de l'auteur

Joseph Muna Karanja holds B.Ed(science)in physics and maths from Egerton University,Kenya and Msc(Electronics) specializing in semiconductor electronics from Kenyatta University, Kenya. He has teaching experience in various University in Kenya notably University of Nairobi and Kenyatta University both from Kenya.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2011
Langue
anglais
ISBN 10 
384430147X
ISBN 13 
9783844301472
Reliure
Broché
Nombre de pages
92
Coordonnées du fabricant
non disponible
Personne responsable
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