Silicon Quantum Dots and its Applications in Solar Cells: Si Nanostucture and Opical, Electrical properties - Couverture souple

Fangsuwannarak, Thipwan

 
9783845409689: Silicon Quantum Dots and its Applications in Solar Cells: Si Nanostucture and Opical, Electrical properties
Couverture souple
ISBN 10 : 3845409681 ISBN 13 : 9783845409689
Editeur : LAP LAMBERT Academic Publishing, 2011

Synopsis

The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a > ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

The structural, optical and electrical properties of crystalline silicon quantum dots (SiQDs) are examined for application to silicon based tandem cells. The approach has been to concentrate on all silicon devices by taking advantage of quantum confinement in low-dimensional Si. The book presents the fabrication technique to form Si nanocrystals in an oxide matrix. Structural analysis, using FTIR, micro-Raman spectroscopy, TEM, XRD, and SIM were detailed. It can be noticed that the packing density of Si QDs, correlated to the oxygen content of the silicon rich oxide layer can be control independently. The preliminary results present that a decrease in the oxygen content (x) results in an increased sharpness of the Strokes-mode Raman peak of nc-Si, attributed to an increase in the proportion of crystalline Si because of the increased number of SiQDs. However, the influence of the surface region on the crystallite core intensity scattering becomes dominant, when SiQD size diameter is very small (a > ~3 nm). The present work shows that a decrease in x-content leading to an increase of the SiQD concentration, initially results in the enhancement of the lateral conductivity in the SiQD.

Biographie de l'auteur

Thipwan Fangsuwannarak is a lecturer in the school of electrical engineering at Suranaree University of Technology in Thailand. She received the PhD. Degree from the ARC Photovoltaics Centre of Excellence, UNSW in Australia. Her work focuses on fabrication and structural,optical, and electrical analysis of nano-materials for PV application.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2011
Langue
anglais
ISBN 10 
3845409681
ISBN 13 
9783845409689
Reliure
Broché
Nombre de pages
212
Coordonnées du fabricant
non disponible
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