Electromigration in Cu Interconnects: The Driving Force Formalism: Modeling and Experiment - Couverture souple

Roy, Dr. Arijit

 
9783845412924: Electromigration in Cu Interconnects: The Driving Force Formalism: Modeling and Experiment
Couverture souple
ISBN 10 : 3845412925 ISBN 13 : 9783845412924
Editeur : LAP LAMBERT Academic Publishing, 2011

Synopsis

This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

Présentation de l'éditeur

This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.

Biographie de l'auteur

Dr. Arijit Roy has attended many prestigious institutes like IITs, NTU (Singapore) and Infineon Technologies. He has published many research articles and contributed significantly on Electromigration. Presently, he is assistant professor in the department of Electronics at WBSU (India), where he is driving for excellence in teaching and research.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2011
Langue
anglais
ISBN 10 
3845412925
ISBN 13 
9783845412924
Reliure
Broché
Nombre de pages
144
Coordonnées du fabricant
non disponible
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