The work concentrate on the improvement of the ZnO photoconductive detector in the UV region. The improvement is based on two mechanisms : The first is the functionlization of the detector surface by specific polymer material and the second mechanism is to improve the structure of the film on the silicon layer through developing the porous layer on n-type silicon substrate.The creation of the nanospikes silicon layer provides strong carrier - carrier interaction. The strong interaction leads to new energy relaxation and recombination channels associated with the electron – hole energy transfer. This new recombination mechanism may help in the fabrication of fast response photoconductive detector.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
The work concentrate on the improvement of the ZnO photoconductive detector in the UV region. The improvement is based on two mechanisms : The first is the functionlization of the detector surface by specific polymer material and the second mechanism is to improve the structure of the film on the silicon layer through developing the porous layer on n-type silicon substrate.The creation of the nanospikes silicon layer provides strong carrier - carrier interaction. The strong interaction leads to new energy relaxation and recombination channels associated with the electron – hole energy transfer. This new recombination mechanism may help in the fabrication of fast response photoconductive detector.
Hanan AbdAli Thjeel, graduated from the Department of Physics, University of Baghdad in 2004,I got a Master degree in electrooptic in 2011 from Baghdad University.work as Asst.Lec. in Wassit University
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: AbdAli HananHanan AbdAli Thjeel, graduated from the Department of Physics, University of Baghdad in 2004,I got a Master degree in electrooptic in 2011 from Baghdad University.work as Asst.Lec. in Wassit UniversityThe work concent. N° de réf. du vendeur 5514172
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The work concentrate on the improvement of the ZnO photoconductive detector in the UV region. The improvement is based on two mechanisms : The first is the functionlization of the detector surface by specific polymer material and the second mechanism is to improve the structure of the film on the silicon layer through developing the porous layer on n-type silicon substrate.The creation of the nanospikes silicon layer provides strong carrier - carrier interaction. The strong interaction leads to new energy relaxation and recombination channels associated with the electron hole energy transfer. This new recombination mechanism may help in the fabrication of fast response photoconductive detector. N° de réf. du vendeur 9783847375722
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Taschenbuch. Etat : Neu. ZnO nanoparticles UV detector | Fabrication and Characterization of ZnO/ Porous Si Photoconductive UV Detector | Hanan AbdAli (u. a.) | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783847375722 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 106200295
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