AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-Added Efficiency for X-Band Applications - Couverture souple

K�hn, Jutta

9783866446151: AlGaN/GaN-HEMT Power Amplifiers with Optimized Power-Added Efficiency for X-Band Applications

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ISBN 10 : 3866446152 ISBN 13 : 9783866446151

Editeur : KIT Scientific Publishing, 2012

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This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

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�diteurKIT Scientific Publishing
Date d'�dition2012
ISBN 10 3866446152
ISBN 13 9783866446151
ReliureBroch�
Langueanglais
Nombre de pages262

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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

Jutta K�hn

Edit� par Karlsruher Institut F�r Technologie Jun 2011, 2011

ISBN 10 : 3866446152 ISBN 13 : 9783866446151

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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. 262 pp. Englisch. N� de r�f. du vendeur 9783866446151

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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

Jutta K�hn

Edit� par Karlsruher Institut F�r Technologie, 2012

ISBN 10 : 3866446152 ISBN 13 : 9783866446151

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

�valuation du vendeur 5 sur 5 �toiles

Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. N� de r�f. du vendeur 9783866446151

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AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

K�hn, Jutta

Edit� par KIT Scientific Publishing, 2014

ISBN 10 : 3866446152 ISBN 13 : 9783866446151

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Vendeur : moluna, Greven, Allemagne

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime . N� de r�f. du vendeur 5587959

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