Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications - Couverture souple

Hosch, Michael

9783869558448: Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

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ISBN 10 : 386955844X ISBN 13 : 9783869558448

Editeur : Cuvillier Verlag, 2011

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�diteur: Cuvillier Verlag
Date d'�dition: 2011
Langue: anglais
ISBN 10: 386955844X
ISBN 13: 9783869558448
Reliure: Broch�
Nombre de pages: 130
Coordonn�es du fabricant: non disponible
Personne responsable: non disponible

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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Michael Hosch

Edit� par Cuvillier Aug 2011, 2011

ISBN 10 : 386955844X ISBN 13 : 9783869558448

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations. 130 pp. Englisch. N� de r�f. du vendeur 9783869558448

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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Hosch, Michael

Edit� par Jentzsch-Cuvillier, Annette, 2011

ISBN 10 : 386955844X ISBN 13 : 9783869558448

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Kartoniert / Broschiert. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. KlappentextrnrnThis thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The ef. N� de r�f. du vendeur 174256578

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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Michael Hosch

Edit� par Cuvillier, Cuvillier Aug 2011, 2011

ISBN 10 : 386955844X ISBN 13 : 9783869558448

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.Cuvillier Verlag, Nonnenstieg 8, 37075 G�ttingen 130 pp. Englisch. N� de r�f. du vendeur 9783869558448

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Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Michael Hosch

Edit� par Cuvillier, Cuvillier

ISBN 10 : 386955844X ISBN 13 : 9783869558448

Neuf Taschenbuch

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations. N� de r�f. du vendeur 9783869558448

Contacter le vendeur