External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs: DE - Couverture souple
Synopsis
This work investigates the application-relevant short-circuit type II and III behaviours of discrete IGBTs and SiC-MOSFETs. Unlike the well-studied SC I, SC II and III involve complex dynamic processes, requiring a deeper physical understanding. External influencing factors such as gate driver design, gate resistance, package parasitics, and magnetic coupling are analysed experimentally, revealing their role in shaping gate voltage overshoot, current peaks, and induced overvoltages. Internally, TCAD simulations highlight the plasma effect in IGBTs, which significantly impacts current peak, decay dynamics, and self-turn-off risks. Additionally, a novel channel potential modification-induced displacement current (CPiC) mechanism is introduced as a contributor to gate voltage overshoot, complementing the classical Miller effect. The SC type III introduces IGBT-diode interactions. Moreover, plasma effects in high-voltage SiC-MOSFETs under SC III are shown for the first time, with implications for dead time and gate bias optimisation. Overall, this dissertation provides new insights into short-circuit physics and suggests methods to improve the ruggedness of IGBTs and SiC-MOSFETs in demanding applications.
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External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs
Edité par
Universitätsverlag Chemnitz Dez 2025, 2025
ISBN 10 : 3961002894
ISBN 13 : 9783961002894
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work investigates the application-relevant short-circuit type II and III behaviours of discrete IGBTs and SiC-MOSFETs. Unlike the well-studied SC I, SC II and III involve complex dynamic processes, requiring a deeper physical understanding. External influencing factors such as gate driver design, gate resistance, package parasitics, and magnetic coupling are analysed experimentally, revealing their role in shaping gate voltage overshoot, current peaks, and induced overvoltages.Internally, TCAD simulations highlight the plasma effect in IGBTs, which significantly impacts current peak, decay dynamics, and self-turn-off risks. Additionally, a novel channel potential modification-induced displacement current (CPiC) mechanism is introduced as a contributor to gate voltage overshoot, complementing the classical Miller effect. The SC type III introduces IGBT-diode interactions. Moreover, plasma effects in high-voltage SiC-MOSFETs under SC III are shown for the first time, with implications for dead time and gate bias optimisation. Overall, this dissertation provides new insights into short-circuit physics and suggests methods to improve the ruggedness of IGBTs and SiC-MOSFETs in demanding applications. 232 pp. Englisch. N° de réf. du vendeur 9783961002894
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Expédition à EUR 23
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External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs : DE
Edité par
Universitätsverlag Chemnitz, 2025
ISBN 10 : 3961002894
ISBN 13 : 9783961002894
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work investigates the application-relevant short-circuit type II and III behaviours of discrete IGBTs and SiC-MOSFETs. Unlike the well-studied SC I, SC II and III involve complex dynamic processes, requiring a deeper physical understanding. External influencing factors such as gate driver design, gate resistance, package parasitics, and magnetic coupling are analysed experimentally, revealing their role in shaping gate voltage overshoot, current peaks, and induced overvoltages.Internally, TCAD simulations highlight the plasma effect in IGBTs, which significantly impacts current peak, decay dynamics, and self-turn-off risks. Additionally, a novel channel potential modification-induced displacement current (CPiC) mechanism is introduced as a contributor to gate voltage overshoot, complementing the classical Miller effect. The SC type III introduces IGBT-diode interactions. Moreover, plasma effects in high-voltage SiC-MOSFETs under SC III are shown for the first time, with implications for dead time and gate bias optimisation. Overall, this dissertation provides new insights into short-circuit physics and suggests methods to improve the ruggedness of IGBTs and SiC-MOSFETs in demanding applications.; Dissertationsschrift. N° de réf. du vendeur 9783961002894
Acheter neuf
EUR 25,90
Expédition à EUR 61,71
Expédition depuis Allemagne vers Etats-Unis
Expédition depuis Allemagne vers Etats-Unis
Quantité disponible : 2 disponible(s)
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External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs | DE
Edité par
Universitätsverlag Chemnitz, 2025
ISBN 10 : 3961002894
ISBN 13 : 9783961002894
Neuf
Taschenbuch
Vendeur : preigu, Osnabrück, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. External and Internal Factors Influencing the Short Circuit of IGBTs and SiC-MOSFETs | DE | Xing Liu | Taschenbuch | Englisch | Universitätsverlag Chemnitz | EAN 9783961002894 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 134136724
Acheter neuf
EUR 25,90
Expédition à EUR 70
Expédition depuis Allemagne vers Etats-Unis
Expédition depuis Allemagne vers Etats-Unis
Quantité disponible : 5 disponible(s)