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Quantitative TEM Study of Nitride Semiconductors: Quantitative transmission electron microscopy study of III-nitride semiconductor nanostructures - Couverture souple

Korytov, Maxim

 
9786131545009: Quantitative TEM Study of Nitride Semiconductors: Quantitative transmission electron microscopy study of III-nitride semiconductor nanostructures
Couverture souple
ISBN 10 : 6131545006 ISBN 13 : 9786131545009
Editeur : Editions universitaires europeennes, 2010

Synopsis

The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.

Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.

À propos de l'auteur

Maxim Korytov was born in Sankt-Petersburg in 1981. He graduated from Saint-Petersburg State Polytechnical University in 2004, then he worked in the Ioffe Physical-Technical Institute.In 2007 he went to the CRHEA-CNRS laboratory (France) to prepare his PhD.In 2010 he got a postdoctoral research position in the IKZ institute (Germany).

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

Éditeur
Editions universitaires europeennes
Date d'édition
2010
Langue
anglais
ISBN 10 
6131545006
ISBN 13 
9786131545009
Reliure
Broché
Nombre de pages
196
Coordonnées du fabricant
non disponible
Personne responsable
non disponible