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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP LAMBERT Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
PAP
Vendeur : PBShop.store US, Wood Dale, IL, Etats-Unis
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PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur L2-9786138263340
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Couverture souple
Vendeur : California Books, Miami, FL, Etats-Unis
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Etat : New. N° de réf. du vendeur I-9786138263340
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP LAMBERT Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
PAP
Vendeur : PBShop.store UK, Fairford, GLOS, Royaume-Uni
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PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur L2-9786138263340
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Optimization of Electrical Parameters (CNTFET)
Edité par
Omniscriptum, LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena,including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section. 68 pp. Englisch. N° de réf. du vendeur 9786138263340
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Optimization of Electrical Parameters (CNTFET) : Optimization of Electrical Parameters for Carbon Nanotube field effect transistor (CNTFET)
Edité par
LAP LAMBERT Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena,including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section. N° de réf. du vendeur 9786138263340
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Couverture souple
Vendeur : Majestic Books, Hounslow, Royaume-Uni
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Etat : New. Print on Demand. N° de réf. du vendeur 407905504
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Couverture souple
Vendeur : Books Puddle, New York, NY, Etats-Unis
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Etat : New. N° de réf. du vendeur 26405248831
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Couverture souple
Vendeur : Biblios, Frankfurt am main, HESSE, Allemagne
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Etat : New. PRINT ON DEMAND. N° de réf. du vendeur 18405248821
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Optimization of Electrical Parameters (CNTFET) (Paperback)
Edité par
LAP Lambert Academic Publishing, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Paperback
Vendeur : CitiRetail, Stevenage, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Paperback. Etat : new. Paperback. In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena, including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9786138263340
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Optimization of Electrical Parameters (CNTFET)
Edité par
LAP LAMBERT Academic Publishing Okt 2025, 2025
ISBN 10 : 6138263340
ISBN 13 : 9786138263340
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -In the sector of electronics, the demand for technological improvement has been steadilyincreasing. Until now, silicon has been the most popular material for addressing currentdemands. However, silicon has its own set of limits; silicon-based integrated circuits andthe scaling of silicon MOSFET design confront issues such as tunnelling effect, gate oxidethickness impact, and so on, which has prompted the development of alternative materials.The expanding academic interest in carbon nanotubes (CNTs) as a possible new type ofelectronic material has resulted in substantial advances in CNT physics, including ballisticand non-ballistic electron transport properties. Low bias transport in a nanotube can benearly ballistic across distances of several hundred nanometers. Extended circuit-levelmodels that can capture both ballistic and non-ballistic electron transport phenomena,including elastic, phonon scattering, strain, and tunnelling effects, have been created fornon-ballistic CNT transistors. The effect of gate oxide thickness on the performance ofnon-ballistic CNTFETs was investigated in our results section.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 68 pp. Englisch. N° de réf. du vendeur 9786138263340
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