Une série de liaisons de communication optique sur puce de 50 µm de longueur, utilisant des longueurs d'onde de propagation de 650 à 850 nm, ont été conçues et réalisées, avec un processus bipolaire SiGe radiofréquence (RF) 0,35 µm. Des sources optiques dimensionnées en microns, des guides d'ondes et des détecteurs de nitrure de silicium ont tous été intégrés sur la même puce pour former une communication complète sur puce micro-optique liaisons. Les LED Si à base d'avalanche (si Av LEDs), le contact Schottky, les stratégies de densification TEOS, les guides d'ondes à base de nitrure de silicium et les technologies de détection bipolaire SiGe de pointe ont été utilisées comme stratégies de conception clés. À partir de la mesure, les meilleures performances des liaisons optiques conçues sur puce montrent un couplage optique de la source au détecteur avec une perte totale de budget de liaison optique de -30 dB jusqu'à 500 MHz en fréquence de coupe. Nous avons observé que le bon alignement du guide d'onde avec la source et la bonne efficacité de chaque dispositif intégré sont alors clairement atteints. Des performances de fréquence plus élevées sont également envisagées à partir des mesures préliminaires.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -A series of second generation of on-chip optical communication links of 50µm length, utilizing 650 - 850 nm propagation wavelengths, have been designed and realized, with a SiGe radio frequency (RF) 0.35µm bipolar process. Micron dimensioned optical sources, silicon nitride waveguides and detectors were all integrated on the same chip to form a complete communication on-chip micro-optical links. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art SiGe bipolar detector technologies were used as key design strategies. From the measurement, best performances of the designed on-chip optical links show optical edge-coupling from source to detector with -30dB total optical link budget loss up to 500MHz in cut off frequency. We observed that the good alignment of the waveguide with the source and the good efficiency of each integrated device are then clearly achieved. Higher frequency performances are also envisaged from preliminary measurements. 176 pp. Englisch. N° de réf. du vendeur 9786138456414
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ogudo KingsleyKingsley A. Ogudo received the B.Tech. Degrees, M-Tech and Ph.D in electrical and electronics engineering from Federal Polytechnic Auchi, Nigeria, Tshwane University of Technology, South Africa and University of Paris E. N° de réf. du vendeur 385851241
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - A series of second generation of on-chip optical communication links of 50µm length, utilizing 650 - 850 nm propagation wavelengths, have been designed and realized, with a SiGe radio frequency (RF) 0.35µm bipolar process. Micron dimensioned optical sources, silicon nitride waveguides and detectors were all integrated on the same chip to form a complete communication on-chip micro-optical links. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art SiGe bipolar detector technologies were used as key design strategies. From the measurement, best performances of the designed on-chip optical links show optical edge-coupling from source to detector with -30dB total optical link budget loss up to 500MHz in cut off frequency. We observed that the good alignment of the waveguide with the source and the good efficiency of each integrated device are then clearly achieved. Higher frequency performances are also envisaged from preliminary measurements. N° de réf. du vendeur 9786138456414
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Design and Development of Si/SiGe Optical Source, Waveguide for On-Chip | Optical Links On-chip Communication Systems,Silicon Nitride Optical Waveguide for Optical coupling on-chip. | Kingsley Ogudo | Taschenbuch | 176 S. | Englisch | 2019 | Éditions universitaires européennes | EAN 9786138456414 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 115845505
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -A series of second generation of on-chip optical communication links of 50µm length, utilizing 650 - 850 nm propagation wavelengths, have been designed and realized, with a SiGe radio frequency (RF) 0.35µm bipolar process. Micron dimensioned optical sources, silicon nitride waveguides and detectors were all integrated on the same chip to form a complete communication on-chip micro-optical links. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art SiGe bipolar detector technologies were used as key design strategies. From the measurement, best performances of the designed on-chip optical links show optical edge-coupling from source to detector with -30dB total optical link budget loss up to 500MHz in cut off frequency. We observed that the good alignment of the waveguide with the source and the good efficiency of each integrated device are then clearly achieved. Higher frequency performances are also envisaged from preliminary measurements.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 176 pp. Englisch. N° de réf. du vendeur 9786138456414
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Vendeur : Buchpark, Trebbin, Allemagne
Etat : Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | A series of second generation of on-chip optical communication links of 50µm length, utilizing 650 ¿ 850 nm propagation wavelengths, have been designed and realized, with a SiGe radio frequency (RF) 0.35µm bipolar process. Micron dimensioned optical sources, silicon nitride waveguides and detectors were all integrated on the same chip to form a complete communication on-chip micro-optical links. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art SiGe bipolar detector technologies were used as key design strategies. From the measurement, best performances of the designed on-chip optical links show optical edge-coupling from source to detector with -30dB total optical link budget loss up to 500MHz in cut off frequency. We observed that the good alignment of the waveguide with the source and the good efficiency of each integrated device are then clearly achieved. Higher frequency performances are also envisaged from preliminary measurements. N° de réf. du vendeur 34026223/2
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Vendeur : Buchpark, Trebbin, Allemagne
Etat : Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | A series of second generation of on-chip optical communication links of 50µm length, utilizing 650 ¿ 850 nm propagation wavelengths, have been designed and realized, with a SiGe radio frequency (RF) 0.35µm bipolar process. Micron dimensioned optical sources, silicon nitride waveguides and detectors were all integrated on the same chip to form a complete communication on-chip micro-optical links. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art SiGe bipolar detector technologies were used as key design strategies. From the measurement, best performances of the designed on-chip optical links show optical edge-coupling from source to detector with -30dB total optical link budget loss up to 500MHz in cut off frequency. We observed that the good alignment of the waveguide with the source and the good efficiency of each integrated device are then clearly achieved. Higher frequency performances are also envisaged from preliminary measurements. N° de réf. du vendeur 34026223/1
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