Articles liés à Extreme Ultraviolet Lithography: Principles and Basic...
Synopsis
This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirror; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most practical lithographic technology for device fabrication at the less than 7-nm node.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Acheter neuf
Afficher cet article
EUR 64,09
EUR 9,70 expédition depuis Allemagne vers France
Destinations, frais et délais
Résultats de recherche pour Extreme Ultraviolet Lithography: Principles and Basic...
Image fournie par le vendeur
Extreme Ultraviolet Lithography
Edité par
Scholars\' Press, 2021
ISBN 10 : 6138959655
ISBN 13 : 9786138959656
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Etat : New. N° de réf. du vendeur 511545120
Quantité disponible : Plus de 20 disponibles
Image fournie par le vendeur
Extreme Ultraviolet Lithography : Principles and Basic Technologies
impression à la demandeVendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book describes the principles and basic technologies of extreme ultraviolet lithography (EUVL). The topics include why research on EUVL was begun and why an exposure wavelength of 13.5 nm was selected; the design of the optical system, which employs reflective mirror; the use of a multilayer film to make a reflective-type mask and how masks are inspected; an historical overview of the development of light sources; resist materials; and the recent performance of lithographic tools for mass production. Three innovations were key to the development: of Mo/Si multilayer films with a high reflectivity and to the shaping and metrology of aspherical mirrors with a precision of less than 0.1 nm. The technology for measuring figure error and the fabrication technology now meet the performance targets. Thus, EUVL has become the most practical lithographic technology for device fabrication at the less than 7-nm node. N° de réf. du vendeur 9786138959656
Quantité disponible : 1 disponible(s)