Introduction to Junctionless Double Gate MOSFET - Couverture souple

Dhiman, Gaurav; Pourush, Rajeev

9786139462483: Introduction to Junctionless Double Gate MOSFET

Couverture souple

ISBN 10 : 6139462487 ISBN 13 : 9786139462483

Editeur : LAP LAMBERT Academic Publishing, 2019

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The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.

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�diteur: LAP LAMBERT Academic Publishing
Date d'�dition: 2019
Langue: anglais
ISBN 10: 6139462487
ISBN 13: 9786139462483
Reliure: Broch�
Nombre de pages: 60
Coordonn�es du fabricant: non disponible
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Introduction to Junctionless Double Gate MOSFET

Gaurav Dhiman|Rajeev Pourush

Edit� par LAP LAMBERT Academic Publishing, 2019

ISBN 10 : 6139462487 ISBN 13 : 9786139462483

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Dhiman GauravGaurav Dhiman was born in Pathankot, India, in1981. He received the B.Tech. degree in Electronics and Communicationengineering from the Punjab Technical University, Jalandhar, India, in 2003,and the M.Tech. and Ph.D. deg. N� de r�f. du vendeur 285393545

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Introduction to Junctionless Double Gate MOSFET

Gaurav Dhiman

Edit� par LAP LAMBERT Academic Publishing Mrz 2019, 2019

ISBN 10 : 6139462487 ISBN 13 : 9786139462483

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. 60 pp. Englisch. N� de r�f. du vendeur 9786139462483

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Introduction to Junctionless Double Gate MOSFET

Gaurav Dhiman

Edit� par LAP LAMBERT Academic Publishing, 2019

ISBN 10 : 6139462487 ISBN 13 : 9786139462483

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc. N� de r�f. du vendeur 9786139462483

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Introduction to Junctionless Double Gate MOSFET

Gaurav Dhiman

Edit� par LAP LAMBERT Academic Publishing M�r 2019, 2019

ISBN 10 : 6139462487 ISBN 13 : 9786139462483

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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne

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Taschenbuch. Etat : Neu. Neuware -The field effect transistors (FETs) fabricated in integrated circuits are majorly with junctions. Due to the device scaling down, the fabrication of these junctions has become gradually more difficult. Also, there is a stringent necessity for having high doping concentration gradient for the smooth functioning of the device. Recently, researchers are focusing on new devices where devices are junction less and no doping gradient requirement. One such structure is the junctionless double gate MOSFET (JL-DG MOSFET) which has shown improved performance against short channel effect, namely drain induced barrier lowering (DIBL), changes in threshold voltage etc.Books on Demand GmbH, �berseering 33, 22297 Hamburg 60 pp. Englisch. N� de r�f. du vendeur 9786139462483

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