Analysis of SRAM Cells for Power Reduction Using Low Power Techniques - Couverture souple

Rukkumani, V.; Srinivasan, K.; Devarajan, N.

9786139900657: Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

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ISBN 10 : 6139900654 ISBN 13 : 9786139900657

Editeur : LAP LAMBERT Academic Publishing, 2018

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The design, total power, static power, dynamic power, Transient time, transient delay and static current in 8T SRAM and 10T SRAM cell are calculated and compared. The 8T SRAM has the least transistor count and least area efficient, but speed of operation is somewhat reduced. Further, increase in the transistor count in 10T SRAM cell, however, makes area and delay large in room temperature. When temperature increases from a particular value, the 10T SRAM cell performs better than the 8T SRAM cell. This justifies the use of 10T SRAM cell for low power applications with varying temperature conditions. The proposed SRAM memory design can be implemented in any digital circuit.

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�diteur: LAP LAMBERT Academic Publishing
Date d'�dition: 2018
Langue: anglais
ISBN 10: 6139900654
ISBN 13: 9786139900657
Reliure: Broch�
Nombre de pages: 152
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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

V. Rukkumani

Edit� par LAP LAMBERT Academic Publishing Okt 2018, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The design, total power, static power, dynamic power, Transient time, transient delay and static current in 8T SRAM and 10T SRAM cell are calculated and compared. The 8T SRAM has the least transistor count and least area efficient, but speed of operation is somewhat reduced. Further, increase in the transistor count in 10T SRAM cell, however, makes area and delay large in room temperature. When temperature increases from a particular value, the 10T SRAM cell performs better than the 8T SRAM cell. This justifies the use of 10T SRAM cell for low power applications with varying temperature conditions. The proposed SRAM memory design can be implemented in any digital circuit. 152 pp. Englisch. N� de r�f. du vendeur 9786139900657

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

V. Rukkumani|K. Srinivasan|N. Devarajan

Edit� par LAP LAMBERT Academic Publishing, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rukkumani V.Dr.V.Rukkumani-Associate Professor,Dr.K.Srinivasan,Professor and Head,Sri Ramakrishna Engineering College,Coimbatore Dr.N.Devarajan, Dean, Sri Ramakrishna Institute of Technology,Coimbatore,Tamilnadu,IndiaThe design, . N� de r�f. du vendeur 385876546

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

V. Rukkumani

Edit� par LAP LAMBERT Academic Publishing Okt 2018, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -The design, total power, static power, dynamic power, Transient time, transient delay and static current in 8T SRAM and 10T SRAM cell are calculated and compared. The 8T SRAM has the least transistor count and least area efficient, but speed of operation is somewhat reduced. Further, increase in the transistor count in 10T SRAM cell, however, makes area and delay large in room temperature. When temperature increases from a particular value, the 10T SRAM cell performs better than the 8T SRAM cell. This justifies the use of 10T SRAM cell for low power applications with varying temperature conditions. The proposed SRAM memory design can be implemented in any digital circuit.VDM Verlag, Dudweiler Landstra�e 99, 66123 Saarbr�cken 152 pp. Englisch. N� de r�f. du vendeur 9786139900657

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

V. Rukkumani (u. a.)

Edit� par LAP LAMBERT Academic Publishing, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

V. Rukkumani

Edit� par LAP LAMBERT Academic Publishing, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The design, total power, static power, dynamic power, Transient time, transient delay and static current in 8T SRAM and 10T SRAM cell are calculated and compared. The 8T SRAM has the least transistor count and least area efficient, but speed of operation is somewhat reduced. Further, increase in the transistor count in 10T SRAM cell, however, makes area and delay large in room temperature. When temperature increases from a particular value, the 10T SRAM cell performs better than the 8T SRAM cell. This justifies the use of 10T SRAM cell for low power applications with varying temperature conditions. The proposed SRAM memory design can be implemented in any digital circuit. N� de r�f. du vendeur 9786139900657

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques

Rukkumani, V., Srinivasan, K., Devarajan, N.

Edit� par LAP LAMBERT Academic Publishing, 2018

ISBN 10 : 6139900654 ISBN 13 : 9786139900657

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paperback. Etat : New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book. N� de r�f. du vendeur ERICA82961399006546

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Analysis of SRAM Cells for Power Reduction Using Low Power Techniques - Couverture souple

Rukkumani, V.; Srinivasan, K.; Devarajan, N.

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