Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature - Couverture souple

Kalyan, Birinderjit Singh; Rana, Deepika

9786200093783: Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Couverture souple

ISBN 10 : 6200093784 ISBN 13 : 9786200093783

Editeur : LAP LAMBERT Academic Publishing, 2019

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�diteur: LAP LAMBERT Academic Publishing
Date d'�dition: 2019
Langue: anglais
ISBN 10: 6200093784
ISBN 13: 9786200093783
Reliure: Broch�
Nombre de pages: 120
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Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Birinderjit Singh Kalyan|Deepika Rana

Edit� par LAP LAMBERT Academic Publishing, 2019

ISBN 10 : 6200093784 ISBN 13 : 9786200093783

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Kalyan Birinderjit SinghMr. Birinderjit Singh Kalyan has vast experience in teaching and research, Master in Technology from Panjab University in Microelectronics and research interest in Nano Computing Devices, Quantum Cellular Auto. N� de r�f. du vendeur 497400856

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Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Birinderjit Singh Kalyan

Edit� par LAP LAMBERT Academic Publishing Nov 2019, 2019

ISBN 10 : 6200093784 ISBN 13 : 9786200093783

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance. 120 pp. Englisch. N� de r�f. du vendeur 9786200093783

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Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Birinderjit Singh Kalyan

Edit� par LAP LAMBERT Academic Publishing, 2019

ISBN 10 : 6200093784 ISBN 13 : 9786200093783

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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance. N� de r�f. du vendeur 9786200093783

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Modeling and Simulation of MOSFET at Liquid Nitrogen Temperature

Birinderjit Singh Kalyan

Edit� par LAP LAMBERT Academic Publishing Nov 2019, 2019

ISBN 10 : 6200093784 ISBN 13 : 9786200093783

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Taschenbuch. Etat : Neu. Neuware -Since 1959 when Jack Kilby of Texas Instruments and Bob Noyce of Fairchild Semiconductor invented the integrated circuit, a hallmark of the semiconductor industry has been the continuous growth in chip performance and in the number of devices per chip. Only six years later in 1965, Gordon Moore, then of Fairchild, published his famous prediction that the number of devices on a chip would double every 12-18 months. This prediction, known as 'Moore's Law', has become the yardstick against which are measured achievements in performance and packing density that come from shrinking the size of the MOSFET. This phenomenal scaling of device size - surpassing two orders of magnitude in the last 40 years - has provided the gains in performance and packing density that underlie the GHz microprocessors and SRAMs that exist today. The connection between increased performance and smaller devices faces challenges at both the device and circuit level. Although shorter MOSFETs can provide higher current densities, unless the parasitic resistances and capacitances associated with the devices and with the metal lines that interconnect the devices scale similarly, the device performance.Books on Demand GmbH, �berseering 33, 22297 Hamburg 120 pp. Englisch. N� de r�f. du vendeur 9786200093783

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