Synopsis
This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices.
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Performance Enhancement of SRAM FINFET using different Gate materials
Edité par
LAP LAMBERT Academic Publishing Dez 2017, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices. 52 pp. Englisch. N° de réf. du vendeur 9786202094283
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Performance Enhancement of SRAM FINFET using different Gate materials
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LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
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Performance Enhancement of SRAM FINFET using different Gate materials
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LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
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Performance Enhancement of SRAM FINFET using different Gate materials
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LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
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Performance Enhancement of SRAM FINFET using different Gate materials
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LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
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Paperback. Etat : Brand New. 52 pages. 8.66x5.91x0.12 inches. In Stock. N° de réf. du vendeur zk6202094281
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Performance Enhancement of SRAM FINFET using different Gate materials
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LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Murugesan ManikandanMr. M.Manikandan currently pursuing his Doctoral degree in the area of Photonics in Karunya University, Coimbatore. He has published 11 research article in International Journals including SCI Journals and 3 resea. N° de réf. du vendeur 385926641
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Performance Enhancement of SRAM FINFET using different Gate materials
Edité par
LAP LAMBERT Academic Publishing Dez 2017, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
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Taschenbuch. Etat : Neu. Neuware -This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices.Books on Demand GmbH, Überseering 33, 22297 Hamburg 52 pp. Englisch. N° de réf. du vendeur 9786202094283
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Performance Enhancement of SRAM FINFET using different Gate materials
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices. N° de réf. du vendeur 9786202094283
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Performance Enhancement of SRAM FINFET using different Gate materials
Edité par
LAP LAMBERT Academic Publishing, 2017
ISBN 10 : 6202094281
ISBN 13 : 9786202094283
Neuf
Taschenbuch
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Taschenbuch. Etat : Neu. Performance Enhancement of SRAM FINFET using different Gate materials | Manikandan Murugesan (u. a.) | Taschenbuch | 52 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9786202094283 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. N° de réf. du vendeur 110810749
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