Room-temperature ferromagnetism in the large and direct bandgap diluted magnetic semiconductor zinc oxide (ZnO) is attributed to the intrinsic defects and p-orbital–p-orbital (p–p) coupling interaction. However, due to oxidation, the ferromagnetism induced by defects is unstable. In the present work, the solution process synthesis route was utilized to grow pristine and bismuth-doped, highly crystalline ZnO nanowire (ZnO NW)-based samples. The magnetization (M-H) curve of all samples shown ferromagnetic behavior at room temperature. The saturation magnetization for Bi-doped ones is ±0.25 emu/g and for undoped it is ±2.0 emu/g so, almost a 10 times larger magnetization. Laser Induced Breakdown Spectroscopy (LIBS) spectra confirmed the presence of dopant elements in the ZnO. X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) shown pronounced 002 peak along c-axis, having hexagonal top face, respectively. The XRD peak broadening was used to estimates stress and it came out to be 2.51x10-2 for pristine ZnO & 5.80x10-2 for Bi-doped ZnO NWs. UV-Vis shown the change in the bandgap of ZnO NWs after doping.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Room-temperature ferromagnetism in the large and direct bandgap diluted magnetic semiconductor zinc oxide (ZnO) is attributed to the intrinsic defects and p-orbital-p-orbital (p-p) coupling interaction. However, due to oxidation, the ferromagnetism induced by defects is unstable. In the present work, the solution process synthesis route was utilized to grow pristine and bismuth-doped, highly crystalline ZnO nanowire (ZnO NW)-based samples. The magnetization (M-H) curve of all samples shown ferromagnetic behavior at room temperature. The saturation magnetization for Bi-doped ones is ±0.25 emu/g and for undoped it is ±2.0 emu/g so, almost a 10 times larger magnetization. Laser Induced Breakdown Spectroscopy (LIBS) spectra confirmed the presence of dopant elements in the ZnO. X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) shown pronounced 002 peak along c-axis, having hexagonal top face, respectively. The XRD peak broadening was used to estimates stress and it came out to be 2.51x10-2 for pristine ZnO & 5.80x10-2 for Bi-doped ZnO NWs. UV-Vis shown the change in the bandgap of ZnO NWs after doping. 100 pp. Englisch. N° de réf. du vendeur 9786202794305
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Room-temperature ferromagnetism in the large and direct bandgap diluted magnetic semiconductor zinc oxide (ZnO) is attributed to the intrinsic defects and p-orbital-p-orbital (p-p) coupling interaction. However, due to oxidation, the ferromagnetism induced by defects is unstable. In the present work, the solution process synthesis route was utilized to grow pristine and bismuth-doped, highly crystalline ZnO nanowire (ZnO NW)-based samples. The magnetization (M-H) curve of all samples shown ferromagnetic behavior at room temperature. The saturation magnetization for Bi-doped ones is ±0.25 emu/g and for undoped it is ±2.0 emu/g so, almost a 10 times larger magnetization. Laser Induced Breakdown Spectroscopy (LIBS) spectra confirmed the presence of dopant elements in the ZnO. X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) shown pronounced 002 peak along c-axis, having hexagonal top face, respectively. The XRD peak broadening was used to estimates stress and it came out to be 2.51x10-2 for pristine ZnO & 5.80x10-2 for Bi-doped ZnO NWs. UV-Vis shown the change in the bandgap of ZnO NWs after doping. N° de réf. du vendeur 9786202794305
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ahmed Kazmi Syed JamalJamal Kazmi did his B.Sc., M.Sc. and M.Phil from UAJK, Pakistan from 2013-2018. Currently, he is pursuing PhD at National University of Malaysia. His research is focused on Si-based semiconductor thin film depos. N° de réf. du vendeur 494133049
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Room-temperature ferromagnetism in the large and direct bandgap diluted magnetic semiconductor zinc oxide (ZnO) is attributed to the intrinsic defects and p-orbital-p-orbital (p-p) coupling interaction. However, due to oxidation, the ferromagnetism induced by defects is unstable. In the present work, the solution process synthesis route was utilized to grow pristine and bismuth-doped, highly crystalline ZnO nanowire (ZnO NW)-based samples. The magnetization (M-H) curve of all samples shown ferromagnetic behavior at room temperature. The saturation magnetization for Bi-doped ones is ±0.25 emu/g and for undoped it is ±2.0 emu/g so, almost a 10 times larger magnetization. Laser Induced Breakdown Spectroscopy (LIBS) spectra confirmed the presence of dopant elements in the ZnO. X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM) shown pronounced 002 peak along c-axis, having hexagonal top face, respectively. The XRD peak broadening was used to estimates stress and it came out to be 2.51x10-2 for pristine ZnO & 5.80x10-2 for Bi-doped ZnO NWs. UV-Vis shown the change in the bandgap of ZnO NWs after doping.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 100 pp. Englisch. N° de réf. du vendeur 9786202794305
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Synthesis and Magnetic Characterization of Bismuth Doped ZnO Nanowires | The basics of ZnO and effect of different doping such as Bi-doping on magnetic properties of ZnO NWs | Syed Jamal Ahmed Kazmi (u. a.) | Taschenbuch | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202794305 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu Print on Demand. N° de réf. du vendeur 119049284
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