Metal oxides, such as ZnO, CdO, SnO2, and Al2O3, have been a subject of research interest for decades due to their unique properties. SnO2 is an active material in device fabrication, and its properties can be improved by adding dopants, such as Tb3+, Eu3+, Mn2+, and Al3+. This study focused on the addition of aluminum, as it has a similar ionic radius to tin and is abundant on Earth. The researchers examined the structural, optical, thermal, and electrical properties of pure and Al-doped SnO2 nanoparticles, with doping concentrations ranging from 0.2 wt% to 4.0 wt%. Adding dopants decreased the crystallite size and affected the band structure, which in turn impacted the electrical and dielectric properties. The electrical properties of the Al-doped SnO2 nanoparticles could be fine-tuned for use in capacitor industries. The researchers also discovered that undoped SnO2 had the highest conductivity, while Al-doping reduced the dielectric constant and dielectric loss values in a specific frequency range, making it suitable for certain device applications. Overall, this study provides valuable insights into the properties of SnO2 and how they can be tailored for specific applications.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Metal oxides, such as ZnO, CdO, SnO2, and Al2O3, have been a subject of research interest for decades due to their unique properties. SnO2 is an active material in device fabrication, and its properties can be improved by adding dopants, such as Tb3+, Eu3+, Mn2+, and Al3+. This study focused on the addition of aluminum, as it has a similar ionic radius to tin and is abundant on Earth. The researchers examined the structural, optical, thermal, and electrical properties of pure and Al-doped SnO2 nanoparticles, with doping concentrations ranging from 0.2 wt% to 4.0 wt%. Adding dopants decreased the crystallite size and affected the band structure, which in turn impacted the electrical and dielectric properties. The electrical properties of the Al-doped SnO2 nanoparticles could be fine-tuned for use in capacitor industries. The researchers also discovered that undoped SnO2 had the highest conductivity, while Al-doping reduced the dielectric constant and dielectric loss values in a specific frequency range, making it suitable for certain device applications. Overall, this study provides valuable insights into the properties of SnO2 and how they can be tailored for specific applications. 72 pp. Englisch. N° de réf. du vendeur 9786206158417
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Vendeur : moluna, Greven, Allemagne
Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ramamurthi Sudha PeriathaiDr. R. Sudha Periathai is an Assistant Professor at The Standard Fireworks Rajaratnam College for Women, Sivakasi. With 27 years of experience, she guided 24 PG projects and published 20 articles in National. N° de réf. du vendeur 877798534
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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Metal oxides, such as ZnO, CdO, SnO2, and Al2O3, have been a subject of research interest for decades due to their unique properties. SnO2 is an active material in device fabrication, and its properties can be improved by adding dopants, such as Tb3+, Eu3+, Mn2+, and Al3+. This study focused on the addition of aluminum, as it has a similar ionic radius to tin and is abundant on Earth. The researchers examined the structural, optical, thermal, and electrical properties of pure and Al-doped SnO2 nanoparticles, with doping concentrations ranging from 0.2 wt% to 4.0 wt%. Adding dopants decreased the crystallite size and affected the band structure, which in turn impacted the electrical and dielectric properties. The electrical properties of the Al-doped SnO2 nanoparticles could be fine-tuned for use in capacitor industries. The researchers also discovered that undoped SnO2 had the highest conductivity, while Al-doping reduced the dielectric constant and dielectric loss values in a specific frequency range, making it suitable for certain device applications. Overall, this study provides valuable insights into the properties of SnO2 and how they can be tailored for specific applications.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 72 pp. Englisch. N° de réf. du vendeur 9786206158417
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Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Metal oxides, such as ZnO, CdO, SnO2, and Al2O3, have been a subject of research interest for decades due to their unique properties. SnO2 is an active material in device fabrication, and its properties can be improved by adding dopants, such as Tb3+, Eu3+, Mn2+, and Al3+. This study focused on the addition of aluminum, as it has a similar ionic radius to tin and is abundant on Earth. The researchers examined the structural, optical, thermal, and electrical properties of pure and Al-doped SnO2 nanoparticles, with doping concentrations ranging from 0.2 wt% to 4.0 wt%. Adding dopants decreased the crystallite size and affected the band structure, which in turn impacted the electrical and dielectric properties. The electrical properties of the Al-doped SnO2 nanoparticles could be fine-tuned for use in capacitor industries. The researchers also discovered that undoped SnO2 had the highest conductivity, while Al-doping reduced the dielectric constant and dielectric loss values in a specific frequency range, making it suitable for certain device applications. Overall, this study provides valuable insights into the properties of SnO2 and how they can be tailored for specific applications. N° de réf. du vendeur 9786206158417
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Vendeur : preigu, Osnabrück, Allemagne
Taschenbuch. Etat : Neu. Sn02 and Al doped SnO2 nanoparticles synthesised by Sol-Gel process. | Structural, optical, thermal, temperature dependent electrical properties and conducting mechanism - A comparative study | Sudha Periathai Ramamurthi (u. a.) | Taschenbuch | Englisch | 2023 | LAP LAMBERT Academic Publishing | EAN 9786206158417 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. N° de réf. du vendeur 126951920
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