Synopsis
In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub-threshold characteristics of a short channel MOS transistor with uniformly-doped channel. An analytical model for sub-threshold surface potential in a short channel MOS transistor has been developed by solving the pseduo-2D Poisson’s equation, formulated by applying Gauss’s law to a rectangular box in the channel covering the entire depletion layer depth. The model has been able to predict an increased influence of the junction depletion regions for smaller channel length and/or higher drain/source bias voltages due to increased charge sharing. The same model is applied to find the sub threshold surface potential for Double Halo MOSFETs. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k material are used instead of silicon dioxide as the insulating material underneath the gate. These modeling will prove to be beneficial and help in further research work in the future.
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Study of subthreshold surface potential of MOSFETs
Edité par
LAP LAMBERT Academic Publishing Jul 2023, 2023
ISBN 10 : 6206753735
ISBN 13 : 9786206753735
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub-threshold characteristics of a short channel MOS transistor with uniformly-doped channel. An analytical model for sub-threshold surface potential in a short channel MOS transistor has been developed by solving the pseduo-2D Poisson's equation, formulated by applying Gauss's law to a rectangular box in the channel covering the entire depletion layer depth. The model has been able to predict an increased influence of the junction depletion regions for smaller channel length and/or higher drain/source bias voltages due to increased charge sharing. The same model is applied to find the sub threshold surface potential for Double Halo MOSFETs. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k material are used instead of silicon dioxide as the insulating material underneath the gate. These modeling will prove to be beneficial and help in further research work in the future. 64 pp. Englisch. N° de réf. du vendeur 9786206753735
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Study of subthreshold surface potential of MOSFETs
Edité par
LAP Lambert Academic Publishing, 2023
ISBN 10 : 6206753735
ISBN 13 : 9786206753735
Neuf
Couverture souple
Vendeur : moluna, Greven, Allemagne
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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: De SwapnadipDr. Swapnadip De is working as Associate Professor of ECE Department of Meghnad Saha Institute of Technology since December 2002. Ms. Ishita Gupta and Poulami Dutta are alumni of ECE Department of Meghnad Saha Institute o. N° de réf. du vendeur 1046991026
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Study of subthreshold surface potential of MOSFETs
Edité par
LAP LAMBERT Academic Publishing Jul 2023, 2023
ISBN 10 : 6206753735
ISBN 13 : 9786206753735
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub-threshold characteristics of a short channel MOS transistor with uniformly-doped channel. An analytical model for sub-threshold surface potential in a short channel MOS transistor has been developed by solving the pseduo-2D Poisson's equation, formulated by applying Gauss's law to a rectangular box in the channel covering the entire depletion layer depth. The model has been able to predict an increased influence of the junction depletion regions for smaller channel length and/or higher drain/source bias voltages due to increased charge sharing. The same model is applied to find the sub threshold surface potential for Double Halo MOSFETs. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k material are used instead of silicon dioxide as the insulating material underneath the gate. These modeling will prove to be beneficial and help in further research work in the future.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 64 pp. Englisch. N° de réf. du vendeur 9786206753735
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Expédition depuis Allemagne vers Etats-Unis
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Image fournie par le vendeur
Study of subthreshold surface potential of MOSFETs
Edité par
LAP LAMBERT Academic Publishing, 2023
ISBN 10 : 6206753735
ISBN 13 : 9786206753735
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this book the main focus has been on the modeling and the influence of depletion layers around the source and the drain regions on the sub-threshold characteristics of a short channel MOS transistor with uniformly-doped channel. An analytical model for sub-threshold surface potential in a short channel MOS transistor has been developed by solving the pseduo-2D Poisson's equation, formulated by applying Gauss's law to a rectangular box in the channel covering the entire depletion layer depth. The model has been able to predict an increased influence of the junction depletion regions for smaller channel length and/or higher drain/source bias voltages due to increased charge sharing. The same model is applied to find the sub threshold surface potential for Double Halo MOSFETs. The shrinking of device dimension leads to reduction of gate oxide thickness. As a result of this the undesirable hot electron effect and the gate tunneling current is increased. In order to overcome this drawback high-k material are used instead of silicon dioxide as the insulating material underneath the gate. These modeling will prove to be beneficial and help in further research work in the future. N° de réf. du vendeur 9786206753735
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EUR 44,59
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Expédition depuis Allemagne vers Etats-Unis
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