SRAM Design in Nanometer Technologies: Low Voltage SRAM Circuit Techniques - Couverture souple

A, Pulla Reddy; G, Sreenivasulu

 
9786206844730: SRAM Design in Nanometer Technologies: Low Voltage SRAM Circuit Techniques
Couverture souple
ISBN 10 : 6206844730 ISBN 13 : 9786206844730
Editeur : LAP LAMBERT Academic Publishing, 2023

Synopsis

In the design of VLSI, where an improvement in minimum supply voltage and a change in few Pico seconds of memory access or cycle times will make a big impact on SoC designs performance. SRAM cell write-ability and read stability are of prime concern at low supply voltages and also for process, voltage and temperature variations. When low supply voltage is applied to SRAM cell, the write operation will not be performed because the cell will not flip to desired voltage levels. A write assist circuit using a negative bitline voltage technique which can assist SRAM cell to flip to the desired voltage levels and assists the write operation is proposed for reducing write failures at low supply voltages.When low supply voltage applied to SRAM cell the read operation will not be performed in the selected cell and the cell stored data will be disturbed in the unselected cells. The proposed lowered WL voltage read assist circuit technique prevents the data from getting disturbed in unselected cells and also assists the read operation in selected cell.

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Éditeur
LAP LAMBERT Academic Publishing
Date d'édition
2023
Langue
anglais
ISBN 10 
6206844730
ISBN 13 
9786206844730
Reliure
Broché
Nombre de pages
120
Coordonnées du fabricant
non disponible
Personne responsable
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