Nanoscale Strain-engineering in Solid State Semiconductor Devices - Couverture souple

Chatterjee, Sulagna

9786209522390: Nanoscale Strain-engineering in Solid State Semiconductor Devices

Couverture souple

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

Editeur : LAP Lambert Academic Publishing, 2026

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�diteur: LAP Lambert Academic Publishing
Date d'�dition: 2026
Langue: anglais
ISBN 10: 6209522394
ISBN 13: 9786209522390
Reliure: Broch�
Nombre de pages: 136
Coordonn�es du fabricant: non disponible
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Nanoscale Strain-engineering in Solid State Semiconductor Devices

Chatterjee, Sulagna

Edit� par LAP Lambert Academic Publishing, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices

Chatterjee, Sulagna

Edit� par LAP LAMBERT Academic Publishing, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

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PAP. Etat : New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. N� de r�f. du vendeur L0-9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices

Chatterjee, Sulagna

Edit� par LAP LAMBERT Academic Publishing, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

Neuf PAP

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PAP. Etat : New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. N� de r�f. du vendeur L0-9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices

Sulagna Chatterjee

Edit� par LAP LAMBERT Academic Publishing Feb 2026, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 136 pp. Englisch. N� de r�f. du vendeur 9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices (Paperback)

Sulagna Chatterjee

Edit� par LAP Lambert Academic Publishing, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

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Paperback. Etat : new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N� de r�f. du vendeur 9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices | From Fundamentals to Applications

Sulagna Chatterjee

Edit� par LAP LAMBERT Academic Publishing, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

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Nanoscale Strain-engineering in Solid State Semiconductor Devices

Sulagna Chatterjee

Edit� par LAP LAMBERT Academic Publishing Feb 2026, 2026

ISBN 10 : 6209522394 ISBN 13 : 9786209522390

Neuf Taschenbuch

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Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude.VDM Verlag, Dudweiler Landstra�e 99, 66123 Saarbr�cken 136 pp. Englisch. N� de r�f. du vendeur 9786209522390

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