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Nanoscale Strain-engineering in Solid State Semiconductor Devices (Paperback)
Edité par
LAP Lambert Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Paperback
Vendeur : Grand Eagle Retail, Bensenville, IL, Etats-Unis
Évaluation du vendeur 5 sur 5 étoiles
Paperback. Etat : new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9786209522390
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Nanoscale Strain-engineering in Solid State Semiconductor Devices: From Fundamentals to Applications
Edité par
LAP LAMBERT Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Couverture souple
Vendeur : California Books, Miami, FL, Etats-Unis
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Etat : New. N° de réf. du vendeur I-9786209522390
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Nanoscale Strain-engineering in Solid State Semiconductor Devices
Edité par
LAP LAMBERT Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
PAP
Vendeur : PBShop.store US, Wood Dale, IL, Etats-Unis
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PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur L2-9786209522390
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EUR 82,17
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Nanoscale Strain-engineering in Solid State Semiconductor Devices
Edité par
LAP LAMBERT Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
PAP
Vendeur : PBShop.store UK, Fairford, GLOS, Royaume-Uni
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PAP. Etat : New. New Book. Shipped from UK. Established seller since 2000. N° de réf. du vendeur L2-9786209522390
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Nanoscale Strain-engineering in Solid State Semiconductor Devices
Edité par
LAP LAMBERT Academic Publishing Feb 2026, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Taschenbuch
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 136 pp. Englisch. N° de réf. du vendeur 9786209522390
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Nanoscale Strain-engineering in Solid State Semiconductor Devices : From Fundamentals to Applications
Edité par
LAP LAMBERT Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Taschenbuch
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. N° de réf. du vendeur 9786209522390
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EUR 69,95
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Nanoscale Strain-engineering in Solid State Semiconductor Devices | From Fundamentals to Applications
Edité par
LAP LAMBERT Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Taschenbuch
Vendeur : preigu, Osnabrück, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. Nanoscale Strain-engineering in Solid State Semiconductor Devices | From Fundamentals to Applications | Sulagna Chatterjee | Taschenbuch | Englisch | 2026 | LAP LAMBERT Academic Publishing | EAN 9786209522390 | Verantwortliche Person für die EU: SIA OmniScriptum Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu. N° de réf. du vendeur 134840687
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Nanoscale Strain-engineering in Solid State Semiconductor Devices
Edité par
LAP LAMBERT Academic Publishing Feb 2026, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Taschenbuch
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 136 pp. Englisch. N° de réf. du vendeur 9786209522390
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Nanoscale Strain-engineering in Solid State Semiconductor Devices (Paperback)
Edité par
LAP Lambert Academic Publishing, 2026
ISBN 10 : 6209522394
ISBN 13 : 9786209522390
Neuf
Paperback
Vendeur : CitiRetail, Stevenage, Royaume-Uni
Évaluation du vendeur 5 sur 5 étoiles
Paperback. Etat : new. Paperback. An analytical model has been developed that estimates induced stress in horizontally embedded nanowires. Stress has been considered to be induced due to mismatch of both lattice and thermo-elastic constants. The contribution of both process- and substrate-induced stress has been accounted for. Various materials have been chosen as substrate for different nanowire materials, depending on their crystal structures. The magnitude and nature of induced stress has been engineered by varying the fractional insertion of the nanowire into the substrate. Nanowires being extremely petite structures always need to be mounted on some substrate. Hence, a commercial substrate has been proposed, such that mobility enhancement through stress-engineering might be accomplished by varying the fractional insertion. Step-by-step stress-engineering for partially embedded nanowire FETs has been performed. The choice of high-k gate dielectric has been shown to play an important role. Similar stress-engineering has been performed for UTB MOSFETs and FinFETs. Both such FETs have been proposed to be fabricated on ingenious, commercial IOS substrates, capable of inducing stress of desired nature and magnitude. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. N° de réf. du vendeur 9786209522390
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EUR 86,30
Expédition à EUR 43,06
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