Superlattice and Strained Layers of Compound Semiconductors: Analytical Method and Characterization - Couverture souple

Singha Roy, Subhamoy

9786630234442: Superlattice and Strained Layers of Compound Semiconductors: Analytical Method and Characterization

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ISBN 10 : 6630234448 ISBN 13 : 9786630234442

Editeur : LAP LAMBERT Academic Publishing, 2026

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�diteur: LAP LAMBERT Academic Publishing
Date d'�dition: 2026
Langue: anglais
ISBN 10: 6630234448
ISBN 13: 9786630234442
Reliure: Broch�
Nombre de pages: 96
Coordonn�es du fabricant: non disponible
Personne responsable: non disponible

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Superlattice and Strained Layers of Compound Semiconductors

Subhamoy Singha Roy

Edit� par LAP LAMBERT Academic Publishing Jul 2026, 2026

ISBN 10 : 6630234448 ISBN 13 : 9786630234442

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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 96 pp. Englisch. N� de r�f. du vendeur 9786630234442

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Superlattice and Strained Layers of Compound Semiconductors : Analytical Method and Characterization

Subhamoy Singha Roy

Edit� par LAP LAMBERT Academic Publishing, 2026

ISBN 10 : 6630234448 ISBN 13 : 9786630234442

Neuf Taschenbuch

impression � la demande

Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne

�valuation du vendeur 5 sur 5 �toiles

Taschenbuch. Etat : Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Superlattice and Strained Layers of Compound Semiconductors: Analytical Method and Characterization : Based on a recently developed electron dispersion law that takes into account the anisotropies of the effective electron masses, the spin orbit splitting constants, and the influence of crystal field splitting within the framework of the k.p formalism, we study the Einstein relation for the diffusivity-mobility ratio (DMR) in quantum wires (QWWs) of heavily doped non-linear materials. We provide a generalized method that is especially useful for findings using quantum restricted optoelectronic materials. It has been discovered that the DMR rises oscillatorily as the electron concentration per unit length increases using the strongly doped n-CdGeAs2, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP as examples. The kind of oscillations is fully dependent on the band structure. The DMR in nanostructures with any dispersion law may be found experimentally. N� de r�f. du vendeur 9786630234442

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