Articles liés à 电子线路
Résultats de recherche pour 电子线路
Image d'archives
Regular Higher Education State Education Commission of the Ninth Five-Year Plan key textbook: Electronic Circuits (4th Edition)(Chinese Edition)
Vendeur : liu xing, Nanjing, JS, Chine
Évaluation du vendeur 5 sur 5 étoiles
paperback. Etat : New. Ship out in 2 business day, And Fast shipping, Free Tracking number will be provided after the shipment.Paperback. Pub Date: 2003. Pages: 609 Language: Chinese in Publisher: Higher Education Press information and Internet age to adapt to the new situation and to teach love reform an urgent need. on the basis of the third edition. after teaching reform practice. multi-party comments. review for improvement and modifications made. Strive to do a complete system. state-of-the-art content. narrative condensed. higher efficiency of teaching. Regular higher education Ninth Five-Year Plan key textbook of the State Board of Education: Electronic Circuits (4th edition) The main contents include the characteristics of semiconductor devices. amplifiers foundation. integrated operational amplifiers. feedback amplifiers. signal arithmetic circuit. waveform generator. power circuit the basis of the digital circuit. a combinational logic circuit. the timing of the digital circuit. the pulse circuit and the integrated circuit system. and so on. Regular higher education Ninth Five-Year Plan key textbook of the State Board of Education: Electronic Circuits (4th Edition) to Zhu Professor Chang Qing Dynasty. by Tsinghua University the trial. Regular higher education Ninth Five-Year Plan key textbook of the State Board of Education: Electronic Circuits (4th Edition) can be used as electronic circuits courses in college science physics textbooks. reference is also available for engineering and technical personnel engaged in the work of electronic circuits. Contents: Chapter semiconductor device characteristics 1.1. a semiconducting behavior. 1.1.1. all intrinsic semiconductor conductive characteristics 1.1.2. the conductive properties of the impurities in semiconductors 1.2. PN junction. 2.1. the formation of the PN junction. 1.2. PN junction unidirectional conductive Health 1.3. diode 1.3.1 diode structure and symbols 1.3.2. the diode voltage characteristics 1.3.3 diode parameters. 1.3 .4. voltage regulator diode 1.3.5. the diode circuit 1.4. bipolar transistors 1.4.1. transistor structure and symbols 1.4.2. transistor carrier transmission 1.4 .3. the transistor current transfer equation true cascode configuration characteristic curve 1.4.5 to 1.4.4. transistor. the main parameters of the transistors 1.5. FET 1.5.1. junction type field effect tube 1.5.2. insulated gate FET 1.5.3. the main parameters of the FET 1.5.4 FET use attention to thinking matters 1.5.5. FET and bipolar transistor compare Appendix semiconductor devices named section Exercises and Questions on the basis of the second chapter of the amplifier 2.1 amplifier components and working principle 2.1.1. the function of the amplifier and composition 2.1.2 common-emitter amplifier 2.1.3 the amplifier performance indicators 2.2. amplifier diagram analysis 2.2.1 graphically determine the quiescent operating point 2.2.2 graphically analyze dynamic work 2.2.3 graphically analyze nonlinear amplifier distortion Appendix voltage and current sources Thevenin's theorem and Norton Theorem 2.3. the stability of the amplifier operating point 2.3.1. the impact of temperature changes of the operating point 2.3.2. 2.4 partial pressure bias-stable circuit. amplifier micro-dependent equivalent circuit analysis 2.4.1. parameters of transistors h and its equivalent circuit 2.4.2. h parameter equivalent circuit analysis of basic amplifier 2.4.3. with Re the total emitter amplifier analysis 2.5 common-collector amplifier - emitter 2.6 common base amplifier 2.7 FET amplifier 2.7.1 concept of low-frequency small-signal AC equivalent circuit of FET 2.7.2. the equivalent circuit analysis Dang effect tube amplifier 2.8. single-tube amplifier frequency characteristics 2.8.1 amplifier frequency characteristics 2.8 .2 transistor hybrid equivalent circuit parameters 7c 2.8.3 Single tube amplifier frequency characteristics Appendix 2.8.1 superposition theorem and Miller Theorem 2.9 multi-stage amplifier 2.9.1 multi-s. N° de réf. du vendeur NE000674
Acheter neuf
EUR 50,82
Expédition à EUR 15,41
Expédition depuis Chine vers Etats-Unis
Expédition depuis Chine vers Etats-Unis
Quantité disponible : 1 disponible(s)