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Core technology of silicon carbide device process Taking silicon carbide device process as the core. the key process technologies of silicon carbide are explained in detail(Chinese Edition)
Edité par
Mechanical Industry Press, 2024
ISBN 10 : 7111741889
ISBN 13 : 9787111741886
Neuf
paperback
Vendeur : liu xing, Nanjing, JS, Chine
Évaluation du vendeur 5 sur 5 étoiles
paperback. Etat : New. Language:Chinese.Paperback. Pub Date: 2024-01 Pages: 428 Publisher: China Machinery Industry Press Core Technology of Silicon Carbide Device Process has 9 chapters. focusing on the silicon carbide (SiC) device process. focusing on key process technologies such as SiC material growth. surface cleaning. ohmic contact. Schottky contact. ion implantation. dry etching. electrolyte preparation. as well as high-power SiC unipolar and bipolar switching devices. SiC nanostructure manufacturing and dev. N° de réf. du vendeur DR007605
Acheter neuf
EUR 195,27
Expédition à EUR 15,85
Expédition depuis Chine vers Etats-Unis
Expédition depuis Chine vers Etats-Unis
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