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Foreign electronic communication textbook series: modern integrated circuit semiconductor devices(Chinese Edition)
Edité par
Publishing House of Electronics Industry, 2000
ISBN 10 : 7121176629
ISBN 13 : 9787121176623
Neuf
paperback
Vendeur : liu xing, Nanjing, JS, Chine
Évaluation du vendeur 5 sur 5 étoiles
paperback. Etat : New. Ship out in 2 business day, And Fast shipping, Free Tracking number will be provided after the shipment.Paperback. Pub Date :2012-07-01 Pages: 258 Publisher: Electronic Industry Press book edge kc11.21 basic information about the title: foreign electronic communication textbook series: modern integrated circuit semiconductor devices List Price: 49.00 yuan Author: Hu Zhengming published Social: Electronic Industry Press Publication Date: July 1. 2012 ISBN: 9.787.121.176.623 words: Page: 258 Edition: 1st Edition Binding: Paperback: Weight: 399 g Editor's Choice foreign electronic communication textbook series: modern integrated circuit semiconductor devices as colleges Microelectronics undergraduate course textbook or reference books. are also available for reference in the relevant work in the field of professional and technical personnel. Executive Summary abroad Electronics and Communication textbook series: modern integrated circuit semiconductor devices system introduced in modern integrated circuit semiconductor devices. is to go into the details of the physical mechanisms of semiconductor devices and works with the practice of combining a textbook. Foreign electronic communications textbook series: modern integrated circuit semiconductor devices is not the usual form of classification of electronic devices. optoelectronic devices. microwave devices. but stressed that the common semiconductor devices. focusing on the PN junction. metal-semiconductor contact bipolar transistors and MOSFET. and several other basic device structure and theory. on this basis. the introduction of other important semiconductor devices such as solar cells. LED. a diode laser. CCD and CMOS image sensors. HEMT devices and memory or the like. Contents Chapter 1 in the semiconductor crystal structure of the electrons and holes 1.1 silicon 1.2 electrons and holes into the key model 1.3 band models 1.4 semiconductor. insulator and conductor 1.5 electron and a hole 1.7 1.6 density of states of thermal equilibrium and Fermi function of 1.8 electron and hole concentration 1.9n and the general theory of p 1.10 1.11 Chapter Summary Exercises References Readings Chapter 2. the movement of electrons and holes with the thermal motion of the composite 2.1 2.2 Drift 2.3 diffusion current in extreme temperature carrier concentration Einstein relation between the relationship between 2.5D and 2.4 band diagram with V. 2.6 electron hole recombination 2.7 hot 2.8 quasi-equilibrium and quasi-Fermi level 2.9 Chapter Summary Exercises References Chapter 3 Readings device manufacturing technology the 3.1 device manufacturing Introduction 3.2 silicon oxidation transfer lithography 3.4 graphics 3.3 - 3.5 doped with 3.6 dopant diffusion is etched thin film deposition 3.8 interconnect 3.7 - 3.10 Chapter Summary backend process 3.9 test. assembly and qualification - a device for producing instance Problem Reference Document Readings Chapter 4 of the PN junction and the metal-semiconductor junction 1 part: the 4.2 depletion layer of the theoretical basis of the PN junction 4.1PN Results model 4.3 4.5 Results of the reverse biased PN junction 4.4 capacitor voltage characteristic - quasi-equilibrium boundary condition 4.7 current continuity equation 4.8 is biased PN junction excess carrier 4.9PN I V characteristics of the junction diode breakdown 4.6 forward bias carrier injection 4.10 charge storage diode 4.11 Part 2: PN junction of the small-signal model optoelectronic devices 4.12 solar battery 4.13 4.14 diode laser 4.15 photodiode Part 3: metal semiconductor junction 4.16Schottky barrier of light-emitting diode and solid-state lighting 4.17 Thermal Emission the theory 4.18Schottky diode 4.19Schottky 4.20 diode applications quantum mechanical tunneling 4.21 ohmic contact 4.22 This chapter Summary Exercises References Readings Chapter 5 MOS capacitor 5.1 flatband conditions for peace with accumulated 5.3 surface depleted strong inversion 5.4 threshold voltage of 5.5 higher tha. N° de réf. du vendeur EI051614
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