Articles liés à Reliability of wide bandgap power semiconductor devices(Chin...
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Language:Chinese.paperback.Pub Date:2024-09.publisher:Southeast University Press.description:Paperback. Pub Date: 2024-09 Pages: 216 Publisher: Southeast University Press Third-generation wide-bandgap power semiconductor devices. represented by silicon carbide and gallium nitride. possess advantages such as low on-resistance. high breakdown
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Reliability of wide bandgap power semiconductor devices(Chinese Edition)
Edité par
Southeast University Press, 2024
ISBN 10 : 7576601531
ISBN 13 : 9787576601534
Neuf
paperback
Vendeur : liu xing, Nanjing, JS, Chine
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paperback. Etat : New. Language:Chinese.Paperback. Pub Date: 2024-09 Pages: 216 Publisher: Southeast University Press Third-generation wide-bandgap power semiconductor devices. represented by silicon carbide and gallium nitride. possess advantages such as low on-resistance. high breakdown voltage. fast switching speed. and good thermal conductivity. Compared to traditional i-based power devices. they can simplify the topology of power electronic systems. reduce system losses and size. and are therefore crucial to t. N° de réf. du vendeur DT045009
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