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Synopsis
This book explores the use of high mobility semiconductors such as germanium and III-V materials, the need to redesign transistors to work with such materials and the appropriateness of Quantum Well-based transistors for this new stage of transistor evolution.
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À propos de l?auteur
Geert Hellings received the B.S. and M.S. degrees in Electrical Engineering from the KU Leuven, Belgium, in 2007. His master thesis was on III-nitride-based UV detectors for space applications. He obtained the PhD degree from the Electrical Engineering Department (ESAT), Integrated Systems Division (INSYS) at the University of Leuven, Belgium. During his PhD, he worked on the integration of high-mobility channel materials for digital logic applications at imec, Leuven, Belgium. He received a Ph.D. grant from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen), Brussels, Belgium. He won the 2008 IEEE Region 8 Student Paper Contest and received the 2011 imec Scientific Excellence Award. He has authored or co-authored approximately 70 technical papers for publication in journals and presentations at conferences and holds various patents.
Kristin De Meyer M.Sc. (1974), PhD (1979) KULeuven. She was holder of an IBM World Trade Postdoctoral Fellowship at the IBM T. J. Watson Research Center, Yorktown Heights, NY. Currently she is the Director of Doctoral Research in imec. Since October 1986, she has also been a Part-Time Professor with ESAT-INSYS, KUL. She was the Coordinator for IMEC in several EEC projects. Dr. De Meyer is an IIEE fellow, member of the Belgian Federal Council for Science Policy and (co) author of over 500 publications.
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
- ÉditeurSpringer
- Date d'édition2013
- ISBN 10 9400763395
- ISBN 13 9789400763395
- ReliureRelié
- Langueanglais
- Nombre de pages140
- Coordonnées du fabricantnon disponible
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High Mobility and Quantum Well Transistors
Edité par
Springer Netherlands, 2013
ISBN 10 : 9400763395
ISBN 13 : 9789400763395
Neuf
Couverture rigide
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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. A comprehensive explanation of Quantum Well-based transistors and their electrical behaviourA consistent set of TCAD models and parameters allows simulating the fabrication process and the electrical behaviour of a Germanium pFET technology. N° de réf. du vendeur 5827648
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High Mobility and Quantum Well Transistors
Edité par
Springer Netherlands Apr 2013, 2013
ISBN 10 : 9400763395
ISBN 13 : 9789400763395
Neuf
Couverture rigide
Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes. 160 pp. Englisch. N° de réf. du vendeur 9789400763395
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High Mobility and Quantum Well Transistors
Edité par
Springer Netherlands, Springer Netherlands Apr 2013, 2013
ISBN 10 : 9400763395
ISBN 13 : 9789400763395
Neuf
Couverture rigide
Vendeur : buchversandmimpf2000, Emtmannsberg, BAYE, Allemagne
Évaluation du vendeur 5 sur 5 étoiles
Buch. Etat : Neu. Neuware -For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET ¿ is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 160 pp. Englisch. N° de réf. du vendeur 9789400763395
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High Mobility and Quantum Well Transistors: Design and TCAD Simulation (Springer Series in Advanced Microelectronics, 42)
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High Mobility and Quantum Well Transistors : Design and TCAD Simulation
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High Mobility and Quantum Well Transistors : Design and TCAD Simulation
Edité par
Springer Netherlands, Springer Netherlands, 2013
ISBN 10 : 9400763395
ISBN 13 : 9789400763395
Neuf
Couverture rigide
Vendeur : AHA-BUCH GmbH, Einbeck, Allemagne
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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET - is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes. N° de réf. du vendeur 9789400763395
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High Mobility and Quantum Well Transistors : Design and TCAD Simulation
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High Mobility and Quantum Well Transistors
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High Mobility and Quantum Well Transistors: Design and Tcad Simulation
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