Process and Device Simulation for MOS-VLSI Circuits - Couverture souple

9789400968448: Process and Device Simulation for MOS-VLSI Circuits

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ISBN 10 : 9400968442 ISBN 13 : 9789400968448

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P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ- ent levels (government agencies, private industries, defense de- partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde stood and that optimation be used to minimize the effect of sta- tistical fluctuations.

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�diteurSpringer
Date d'�dition2011
ISBN 10 9400968442
ISBN 13 9789400968448
ReliureBroch�
Langueanglais
Nombre de pages636
�diteurAntognetti P., Antoniadis D.A., Dutton Robert W., Oldham W.G.
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9789024728244: Process and Device Simulation for Mos-Vlsi Circuits

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ISBN 10 : 902472824X ISBN 13 : 9789024728244
Editeur : Kluwer Academic Publishers, 1983
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Process and Device Simulation for MOS-VLSI Circuits

Antognetti, P.|Antoniadis, D. A.|Dutton, Robert W.|Oldham, W. G.

Edit� par Springer Netherlands, 2011

ISBN 10 : 9400968442 ISBN 13 : 9789400968448

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982 P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is. N� de r�f. du vendeur 5829072

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Process and Device Simulation for MOS-VLSI Circuits

P. Antognetti

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations. 636 pp. Englisch. N� de r�f. du vendeur 9789400968448

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Process and Device Simulation for MOS-VLSI Circuits (NATO Science Series E:)

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Process and Device Simulation for MOS-VLSI Circuits

P. Antognetti

Edit� par Springer Netherlands, Springer Netherlands Okt 2011, 2011

ISBN 10 : 9400968442 ISBN 13 : 9789400968448

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Taschenbuch. Etat : Neu. Neuware -P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch. N� de r�f. du vendeur 9789400968448

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Process and Device Simulation for MOS-VLSI Circuits

P. Antognetti

Edit� par Springer Netherlands, Springer Netherlands, 2011

ISBN 10 : 9400968442 ISBN 13 : 9789400968448

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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations. N� de r�f. du vendeur 9789400968448

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