Heterostructure Epitaxy and Devices (Nato Science Partnership Subseries 3): 9789401065931

Description du livre Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From October 15 to 19, 1995 a Workshop on Hetero structureEpitaxyandDeviceswasheldatSmoleniceCastlenear Slovakia'scapital Bratislava. The intention ofthisWorkshop was toestablishandstrengthentiesbetweenscientistsoftheformerly Socialist East and Middle-European states with their colleagues fromtheWesterncountries. WiththisaimtheWorkshopfoundthe financialsupportbyNATOwhichtremendouslyhelpedtofacilitate organizingthemeeting That the Workshop was also a scientific success is evidenced by the present volume comprising a selection of the contributed papers. We are confident that the reader of these Proceedings can convincehimselfofthe highqualityofthe work whose results are presented here. We hope that this and the numerousdiscussionsbetweenthe participants ofthe Workshop will promote cooperations among scientists from the countries representedatthemeeting. It is a pleasure to express our gratitude to NATO and, as representatives ofthe institutions involved in the organization, to Lubomir Malacky (Institute of Electrical Engineering, Slovak Academy of Sciences) and Hergo-Heinrich Wehmann (Institute for Semiconductor Technology, Technical University Braun schweig) whose dedicated work was most essential for the Workshop. A. Schlachetzki J. Novak November1995 xiii SIMULATIONOFIII-VLAYERGROWTH y. ARIMA DepartmentofPhysics, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan AND T. IRISAWA ComputerCenter, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan 1. Introduction Since it was reported [1] that the intensities of RHEED for the growing surface of aGaAs crystal in the process of MBE oscillate with a period correspondingto the completion of a monolayer, this phenomenon has been applied to the thin layer growth of man-made superlattices. 340 pp. Englisch. N� de r�f. du vendeur 9789401065931

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Heterostructure Epitaxy and Devices (Nato Science Partnership Subseries: 3)

Nov�k, Josef (Editor) / Schlachetzki, A. (Editor)

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ISBN 10 : 9401065934 ISBN 13 : 9789401065931

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Description du livre Paperback. Etat : Brand New. 340 pages. 9.50x6.30x1.00 inches. In Stock. N� de r�f. du vendeur x-9401065934

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Heterostructure Epitaxy and Devices

. Ed(s): Novak, Josef; Schlachetzki, Andreas

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Description du livre Etat : New. Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 15-19, 1995 Editor(s): Novak, Josef; Schlachetzki, Andreas. Series: NATO Science Partnership Subseries: 3. Num Pages: 323 pages, 96 black & white illustrations, biography. BIC Classification: TGMT; THR; TJFD. Category: (P) Professional & Vocational. Dimension: 240 x 160 x 18. Weight in Grams: 543. . 2013. Softcover reprint of the original 1st ed. 1996. Paperback. . . . . N� de r�f. du vendeur V9789401065931

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Heterostructure Epitaxy and Devices

A. Schlachetzki

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ISBN 10 : 9401065934 ISBN 13 : 9789401065931

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Description du livre Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - From October 15 to 19, 1995 a Workshop on Hetero structureEpitaxyandDeviceswasheldatSmoleniceCastlenear Slovakia'scapital Bratislava. The intention ofthisWorkshop was toestablishandstrengthentiesbetweenscientistsoftheformerly Socialist East and Middle-European states with their colleagues fromtheWesterncountries. WiththisaimtheWorkshopfoundthe financialsupportbyNATOwhichtremendouslyhelpedtofacilitate organizingthemeeting That the Workshop was also a scientific success is evidenced by the present volume comprising a selection of the contributed papers. We are confident that the reader of these Proceedings can convincehimselfofthe highqualityofthe work whose results are presented here. We hope that this and the numerousdiscussionsbetweenthe participants ofthe Workshop will promote cooperations among scientists from the countries representedatthemeeting. It is a pleasure to express our gratitude to NATO and, as representatives ofthe institutions involved in the organization, to Lubomir Malacky (Institute of Electrical Engineering, Slovak Academy of Sciences) and Hergo-Heinrich Wehmann (Institute for Semiconductor Technology, Technical University Braun schweig) whose dedicated work was most essential for the Workshop. A. Schlachetzki J. Novak November1995 xiii SIMULATIONOFIII-VLAYERGROWTH y. ARIMA DepartmentofPhysics, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan AND T. IRISAWA ComputerCenter, Gakushuin University 1-5-1 Mejiro, Toshima-ku, Tokyo 171, Japan 1. Introduction Since it was reported [1] that the intensities of RHEED for the growing surface of aGaAs crystal in the process of MBE oscillate with a period correspondingto the completion of a monolayer, this phenomenon has been applied to the thin layer growth of man-made superlattices. N� de r�f. du vendeur 9789401065931

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Heterostructure Epitaxy and Devices

Nov�k, Josef|Schlachetzki, A.

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ISBN 10 : 9401065934 ISBN 13 : 9789401065931

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Description du livre Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 15-19, 1995 Section I: Epitaxial Growth. Simulation of III-V Layer Growth Y. Arima, T. Irisawa. Real Time Monitoring of Epitaxial Growth W. Richter, et al. Infl. N� de r�f. du vendeur 5833211

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Heterostructure Epitaxy and Devices

. Ed(s): Novak, Josef; Schlachetzki, Andreas

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Description du livre Etat : New. Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 15-19, 1995 Editor(s): Novak, Josef; Schlachetzki, Andreas. Series: NATO Science Partnership Subseries: 3. Num Pages: 323 pages, 96 black & white illustrations, biography. BIC Classification: TGMT; THR; TJFD. Category: (P) Professional & Vocational. Dimension: 240 x 160 x 18. Weight in Grams: 543. . 2013. Softcover reprint of the original 1st ed. 1996. Paperback. . . . . Books ship from the US and Ireland. N� de r�f. du vendeur V9789401065931

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