Articles liés à Ferroelectric-Gate Field Effect Transistor Memories:...
Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications - Couverture souple
Livre 26 sur 37: Topics in Applied Physics
Synopsis
Preface
I. Operation Principle of One-Transistor Type Ferroelectric-gate Field Effect Transistors
II. Practical Characteristics of Inorganic Ferroelectric-gate FETs
Si-Based Ferroelectric-gate Field Effect Transistors
1) Pt/SrBi2Ta2O9(SBT)/(Hf,SiO)2/Si gate structure Ferroelectric FETs
2) Pt/(SBT,BLT)/HfO2/Si gate structure Ferroelectric FETs
Thin film-Based Ferroelectric-gate Field Effect Transistors
3) ITO/PZT/LaNiO3(LNO) gate structure Ferroelectric FETs
4) ZnO/Pb(Zr,Ti)O3 gate structure Ferroelectric FETs
5) Pt/PZT/ZnO gate structure Ferroelectric FETs
III. Practical Characteristics of Organic Ferroelectric-gate FETs
Si-Based Ferroelectric-gate Field Effect Transistors
1) Polyvinylidene fluoride (PVDF)/Si structure Ferroelectric-gate FETs
2) Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))/Si structure Ferroelectric-gate FETs
Thin film-Based Ferroelectric-gate Field Effect Transistors
3) P(VDF-TrFE)/Pentacene structure Ferroelectric-gate FETs
4) P(VDF-TrFE)/oxide thin film structure Ferroelectric-gate FETs
Ferroelectric-gate Field Effect Transistors with flexible substrates
5) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on plastic substrates
6) P(VDF-TrFE)-based Ferroelectric-gate FETs fabricated on paper substrates
IV. Applications and Future Prospects
1) Novel Applications to NAND-type Memory Circuits
2) Novel Applications to Non-memory Devices
3) Features of One-Transistor Type Ferroelectric-gate Field Effect Transistors
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
