This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.
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Min Zhu received his B.Sc. in Electronics Science and Technology from Hubei University, China in 2009, and completed his Ph.D. in Microelectronics and Solid-State Electronics at Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2014. His major research project in Prof. Zhitang Song's group concerned a Ti-Sb-Te alloy for high-speed and low-power phase change memory. Subsequently, he received an Alexander von Humboldt Research Fellowship and became a post-doctoral fellow working with Prof. Matthias Wuttig at RWTH Aachen University, investigating the crystallization behavior of phase change materials.
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Vendeur : BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Allemagne
Buch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications. 124 pp. Englisch. N° de réf. du vendeur 9789811043819
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Gebunden. Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Nominated as an outstanding thesis by the University of Chinese Academy of SciencesProposes a novel Ti-Sb-Te alloy for high-speed and low-power phase change memoryCovers both the mechanism and component optimizations of the Ti-Sb-Te alloy, . N° de réf. du vendeur 145674190
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Buch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications. N° de réf. du vendeur 9789811043819
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