Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor - Couverture souple
Synopsis
Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)
Discusses an analytical model for the ionization coefficient and breakdown voltage of GNR-based FETs
Presents simulations for GNR-based FETs in terms of breakdown voltage and calculates the maximum operating voltage of the typical GNRFETs at different conditions
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À propos de l'auteur
Mahdiar Ghadiry is a postdoctorate in electronics at the University of Malaya (UM), received his PhD in microelectronics, and has more than six years of experience at the university including managing, lecturing, and supervising master's and degree-level students. He has an extensive research background and has published more than 30 ISI journal articles and 3 books. In addition, he has been involved in the electronics industry for three years, and has more than four years of experience in integrated circuit (IC) design and embedded system design as an employee of the Electronic Components Industries (ECI), which is the biggest IC design company in Iran. Dr. Iraj Sadegh Amiri received his B.Sc (Applied Physics) degree from the Public University of Urmia, Iran in 2001 and a gold medalist M.Sc. from the University Technology Malaysia (UTM), in 2009. He was awarded a PhD degree in photonics in January 2014. He has published well over 350 academic journal/conference papers and books/chapters on optical soliton communications, telecommunications, fiber lasers, laser physics, waveguide fabrication and application in photonics, photonics, optics, nonlinear fiber optics, quantum cryptography, and bioengineering. He was a junior researcher at the University Technology Malaysia (UTM), Laser and Photonics Center and a postdoctoral research fellow at the University of Malaya (UM), Photonics Research Center (PRC). Currently, he is a senior lecturer in the University of Malaya (UM), Photonics Research Center (PRC) under the directorship of Professor Dr. Harith Ahmad.
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (eng)
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (Paperback)
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Springer Verlag, Singapore, Singapore, 2017
ISBN 10 : 9811065497
ISBN 13 : 9789811065491
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Paperback. Etat : new. Paperback. This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (a), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gausss law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. N° de réf. du vendeur 9789811065491
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Edité par
Springer Nature Singapore Nov 2017, 2017
ISBN 10 : 9811065497
ISBN 13 : 9789811065491
Neuf
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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient ( ), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. 96 pp. Englisch. N° de réf. du vendeur 9789811065491
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (SpringerBriefs in Applied Sciences and Technology)
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (SpringerBriefs in Applied Sciences and Technology)
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor (SpringerBriefs in Applied Sciences and Technology)
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
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Springer Singapore, 2017
ISBN 10 : 9811065497
ISBN 13 : 9789811065491
Neuf
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
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Springer, Springer Nov 2017, 2017
ISBN 10 : 9811065497
ISBN 13 : 9789811065491
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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Provides analytical models for lateral electric field and length of velocity saturation region of graphene nanoribbon based field effect transistors (GNR-based FETs)Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 96 pp. Englisch. N° de réf. du vendeur 9789811065491
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Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Edité par
Springer Nature Singapore, Springer, 2017
ISBN 10 : 9811065497
ISBN 13 : 9789811065491
Neuf
Taschenbuch
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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient ( ), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this,simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. N° de réf. du vendeur 9789811065491
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