Driven by the advent of two-dimensional materials, valleytronics is emerging as the next hot field of research in materials science. While the use of charge or spin degrees of freedom in electronic materials as information carriers is familiar and well-appreciated, employment of the valley degree of freedom as an information carrier has remained elusive for many decades. Shortly following the discovery of isolated graphene, 2D semiconductors such as transition metal dichalcogenides were also isolated and investigated. We now understand that these materials can have separately addressable valleys because each valley can be uniquely coupled to a spin state. This imparts the ability to address different valleys (like pseudospins) with electric field, magnetic field, or light, and there is now a real possibility to engineer practical devices based on using valley as the information carrier. Valleytronics in 2D Materials is the first book in the world on the topic of valleytronics. The reader is introduced to the concept via a brief history emphasizing the challenges that impeded its development for so long. We then dive into the valley physics of 2D semiconductors to explain the recent excitement in 2D valleytronics, the scientific investigations to confirm the addressable valleys, and the attempts to engineer valley devices for practical purposes. The text takes on a decidedly practical approach towards the subject, seeking to bring the reader quickly into the field by presenting the minimum theoretical basis for understanding the use of the valley degree of freedom in devices. A selection of key works establishing the scientific underpinnings of valley addressability and control are described to help the reader grasp the current stage of understanding, the technical foundations established, and the open questions. The renewal in valleytronics is yet unfinished, but with more than a decade of research and engineering efforts devoted in recent times, this book seeks to provide a timely reference for students, scientists and engineers to join this exciting journey and perhaps help to create the next disruption in information technology.
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Professor Kuan Eng Johnson Goh is Division Director and Principal Scientist at the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore. He is also Adjunct Professor at the School of Physical and Mathematical Sciences, Nanyang Technological University (NTU), Singapore. He owns 5 patents and has published more than 100 papers including in top journal series under the Nature, Advanced Materials, ACS and the Physical Review publishing groups. He has given more than 25 invited talks including 3 keynotes and 1 plenary lecture. He holds a PhD in Physics from University of New South Wales, Australia.
Dr Calvin Pei Yu Wong is Research Scientist and Deputy Head of the Quantum Technologies for Engineering (QTE) department at the Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore. His current research involves low temperature (mK) magneto-transport measurements and scanning probe microscopy of 2D valleytronic and quantum materials. He was awarded the NUS Graduate School for Integrative Science and Engineering Scholarship to pursue multidisciplinary research topics for his PhD. He holds a PhD in Integrative Sciences and Engineering from National University of Singapore, Singapore.
Dr Tong Wang is Research Scientist at the Institute for Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), and focuses on strategic research planning, road mapping, and technology analysis. He was awarded the A*STAR National Science Scholarship for the completion of his Bachelor and PhD degrees. Having graduated in 2019, he has published 6 first-author papers and contributed to many others. He has also received a number of accolades such as the Springer-Nature Award and the A*STAR Roll of Honour. He holds a PhD in Physics from the University of Oxford, UK.
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