Gan-based Materials And Devices: Growth, Fabrication, Characterization & Performance - Couverture rigide

 
9789812388445: Gan-based Materials And Devices: Growth, Fabrication, Characterization & Performance
Couverture rigide
ISBN 10 : 9812388443 ISBN 13 : 9789812388445
Editeur : World Scientific Publishing Co Pte Ltd, 2004

Synopsis

The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

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Éditeur
World Scientific Publishing Co Pte Ltd
Date d'édition
2004
Langue
anglais
ISBN 10 
9812388443
ISBN 13 
9789812388445
Reliure
Relié
Nombre de pages
300
Éditeur
Davis Robert F, Shur Michael S, Dietrich Harry B
Coordonnées du fabricant
non disponible
Personne responsable
gpsr@libri.de
gpsr@libri.de

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