Introduction to Nanoelectronic Single-Electron Circuit Design - Couverture rigide

Hoekstra, Jaap

Couverture rigide

ISBN 10 : 9814745561 ISBN 13 : 9789814745567

Editeur : Pan Stanford Publishing Pte Ltd, 2016

Synopsis

Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science.

Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.

A propos du livre

À propos de l?auteur

Jaap Hoekstra obtained an MSc in physics from the University of Amsterdam in 1983 and a PhD in microelectronics from the Delft University of Technology in 1988. Since then he has been employed by the Faculty of Electrical Engineering, Mathematics and Computer Science of the Delft University of Technology to teach semiconductor physics, electronics, and nanoelectronics. Prof. Hoekstra's research focuses on bit-level systolic arrays, artificial neural networks, microelectronic devices, and nanoelectronics, especially modeling of single-electron devices.

Détails de l'édition

• Éditeur: Pan Stanford Publishing Pte Ltd
• Date d'édition: 2016
• Langue: anglais
• ISBN 10: 9814745561
• ISBN 13: 9789814745567
• Reliure: Relié
• Numéro d'édition: 2
• Nombre de pages: 348
• Coordonnées du fabricant: Taylor & Francis; https://taylorandfrancis.com/knowledge/; ; 6000 BROKEN SOUND PARKWAY, NW SUITE 300; BOCA RATON; FL; 22487; Etats-Unis
• Personne responsable: non disponible