GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China.
This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices.
GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Les informations fournies dans la section « Synopsis » peuvent faire référence à une autre édition de ce titre.
Hongyu Yu and Tianli Duan are bkoth with the Southern University of Science and Technology of China, Shenzhen
Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.
Vendeur : Hamelyn, Madrid, M, Espagne
Etat : Muy bueno. : Este libro explora los dispositivos de potencia de nitruro de galio, abarcando temas como la electrónica de potencia, el galio y el carburo de silicio. Publicado en 2017 por Taylor & Francis Group y Jenny Stanford Publishing, cuenta con 298 páginas y está escrito en inglés. Es una obra que profundiza en las clasificaciones LC TK7871.85 y TK7881.15 .G35 2017, ofreciendo una visión detallada de estos dispositivos. EAN: 9789814774093 Tipo: Libros Categoría: Tecnología|Ciencias Título: Gallium Nitride Power Devices Autor: HongYu Yu| Tianli Duan Editorial: Jenny Stanford Publishing Idioma: en Páginas: 298. N° de réf. du vendeur Happ-2026-07-02-32aebfde
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