Charge Pump Circuit Design

Feng Pan, Tapan Samaddar

ISBN 10: 007147045X / ISBN 13: 9780071470452

Edité par IRWIN, 2006

A propos de cet article

Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher.

N° de réf. du vendeur 3077674/1

Détails bibliographiques

• Titre: Charge Pump Circuit Design
• Éditeur: IRWIN
• Date de parution: 2006
• Langue: anglais
• ISBN à 10 chiffres: 007147045X
• ISBN à 13 chiffres: 9780071470452
• Reliure: Couverture rigide
• État de l'article: Hervorragend
• Catalogues du vendeur:
  • Bücher

A propos de ce titre

Synopsis

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Charge pumps are finding increased attention and diversified usage in the new era of nanometer-generation chips used in different systems. This book explains the different architectures and requirements for an efficient charge pump design and explains each step in detail. It's filled with extra hands-on design information, potential pitfalls to avoid, and practical ideas harnessed from the authors' extensive experience designing charge pumps.

À propos des auteurs

Tapan Samaddar is a design engineer at SanDisk Corporation, where he leads the company's high-voltage circuit designs. Previously, he was employed by T-RAM, Inc., where he was involved in the design of high-speed SRAM-compatible memory chips. He is a holder of several U.S. design patents. Mr. Samaddar has also worked on high-density NOR Flash memory at Atmel Corporation, and on high-speed cache memory designs at ST Microelectronics.

Feng Pan is doing circuit design at SanDisk Corporation, where he is involved in defining the architecture and implementing charge pumps and related high-voltage circuits over several generations of NAND Flash memory products. He is aholder of 17 U.S. design patents. Mr. Pan previously worked at AMD, where he contributed to the company's NOR Flash memory chip designs. He holds an MS degree from Stanford University and a BS degree from U.C. Berkeley.

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