Compound Semiconductors Strained Layers and Devices

. Ed(s): Willander, Magnus; Jain, Suresh C.; Overstraeten, R. Van

ISBN 10: 1461370000 / ISBN 13: 9781461370000

Edité par Springer-Verlag New York Inc., 2014

A propos de cet article

Editor(s): Willander, Magnus; Jain, Suresh C.; Overstraeten, R. Van. Series: Electronic Materials Series. Num Pages: 349 pages, 8 black & white illustrations, biography. BIC Classification: TGMT; TJFD5. Category: (P) Professional & Vocational. Dimension: 235 x 155 x 19. Weight in Grams: 539. . 2014. Paperback. . . . . Books ship from the US and Ireland.

N° de réf. du vendeur V9781461370000

Détails bibliographiques

• Titre: Compound Semiconductors Strained Layers and Devices
• Éditeur: Springer-Verlag New York Inc.
• Date de parution: 2014
• Langue: anglais
• ISBN à 10 chiffres: 1461370000
• ISBN à 13 chiffres: 9781461370000
• Reliure: Couverture souple
• État de l'article: New

A propos de ce titre

Synopsis

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si by Erich Kasper in Germany) we have seen a steady accu- mulation of new materials and devices with enhanced performance made pos- sible by strain. 1989-1999 have been very good years for the strained-Iayer- devices. Several breakthroughs were made in the growth and doping technology of strained layers. New devices were fabricated as a results of these break- throughs. Before the advent of strain layer epitaxy short wavelength (violet to green) and mid-IR (2 to 5 f. Lm) regions of the spectrum were not accessi- ble to the photonic devices. Short wavelength Light Emitting Diodes (LEDs) and Laser Diodes (LDs) have now been developed using III-Nitride and II-VI strained layers. Auger recombination increases rapidly as the bandgap narrows and temperature increases. Therefore it was difficult to develop mid-IR (2 to 5 f. Lm range) lasers. The effect of strain in modifying the band-structure and suppressing the Auger recombination has been most spectacular. It is due to the strain mediated band-structure engineering that mid-IR lasers with good per- formance have been fabricated in several laboratories around the world. Many devices based on strained layers have reached the market place. This book de- scribes recent work on the growth, characterization and properties o(compound semiconductors strained layers and devices fabricated using them.