Defects in Microelectronic Materials and Devices

Daniel M. Fleetwood

ISBN 10: 1420043765 / ISBN 13: 9781420043761

Edité par Taylor & Francis Inc Nov 2008, 2008

A propos de cet article

Neuware - Focusing primarily on silicon-based microelectronics, Defects in Microelectronic Materials and Devices provides a comprehensive overview of recent progress made in understanding the effects of electrically active defects in microelectronic materials. The book places particular emphasis on defects that limit device quality, reliability, manufacturability, and radiation response. Notable theorists and researchers present their perspectives on defects in insulators and in semiconductors as well as hydrogen and defect-related failure mechanisms. The text also discusses compound semiconductor materials for microelectronic applications and examines new information garnered from physics and engineering models.

N° de réf. du vendeur 9781420043761

Détails bibliographiques

• Titre: Defects in Microelectronic Materials and Devices
• Éditeur: Taylor & Francis Inc Nov 2008
• Date de parution: 2008
• Langue: anglais
• ISBN à 10 chiffres: 1420043765
• ISBN à 13 chiffres: 9781420043761
• Reliure: Buch
• État de l'article: Neu
• Dimensions: 260 L x 185 H x 42 P (en millimètres) 260 millimètres de largeur par 185 millimètres de hauteur par 42 millimètres de profondeur
• Poids: 1520 grammes

A propos de ce titre

Synopsis

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.

A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:

• Vacancies, interstitials, and impurities (especially hydrogen)
• Negative bias temperature instabilities
• Defects in ultrathin oxides (SiO2 and silicon oxynitride)

Take A Proactive Approach The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging

À propos de l?auteur

Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf