The Effects of Temperature and Electron Radiation on the Electrical Properties of Algan/Gan Heterostructure Field Effect Transistors

Moran, Jeffrey T.

ISBN 10: 128827341X / ISBN 13: 9781288273416

Edité par BiblioScholar, 2012

A propos de cet article

KlappentextAlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study, in recent years, owing to their highly desirable material and electrical properties, ruggedness, and survivability even during and aft.

N° de réf. du vendeur 6552165

Détails bibliographiques

• Titre: The Effects of Temperature and Electron Radiation on the Electrical Properties of Algan/Gan Heterostructure Field Effect Transistors
• Éditeur: BiblioScholar
• Date de parution: 2012
• Langue: anglais
• ISBN à 10 chiffres: 128827341X
• ISBN à 13 chiffres: 9781288273416
• Reliure: Couverture souple
• État de l'article: New

A propos de ce titre

Synopsis

AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) have come under increased study, in recent years, owing to their highly desirable material and electrical properties, ruggedness, and survivability even during and after exposure to extreme temperature and radiation environments. These devices or similar devices constructed of AlGaN and/or GaN materials are being researched for their potential applications in many military and space based systems. In this study, unpassivated and SiN passivated Al0.27Ga0.73N/GaN HFETs were subjected to electron radiation at incident energies of 0.5MeV and 1.0MeV and fluences from 5x1014 to 5x1015 [e-/cm2] while maintained in a 10-6 Torr or higher vacuum at liquid nitrogen temperature (LN). The primary focus of the research was the effects of electron radiation and temperature on drain current, gate leakage current, threshold voltage shift, and gate-channel capacitance.

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