Embedded Memories for Nano-scale VLSIs

. Ed(s): Zhang, Kevin

ISBN 10: 1441946942 ISBN 13: 9781441946942
Edité par Springer-Verlag New York Inc., 2010
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An in-depth view on the state-of-the-art embedded memory technologies will be found in this comprehensive book. The book helps practicing engineers grasp key technology attributes and advanced design techniques in nano-scale VLSI design. Editor(s): Zhang, Kevin. Series: Integrated Circuits and Systems. Num Pages: 396 pages, 110 black & white illustrations, 15 black & white tables, biography. BIC Classification: TBN; THR; TJFC; UKS. Category: (P) Professional & Vocational. Dimension: 234 x 156 x 20. Weight in Grams: 554. . 2010. Softcover reprint of hardcover 1st ed. 2009. Paperback. . . . . Books ship from the US and Ireland. N° de réf. du vendeur V9781441946942

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Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.

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An in-depth view on the state-of-the-art embedded memory technologies will be found in this comprehensive book. The book helps practicing engineers grasp key technology attributes and advanced design techniques in nano-scale VLSI design.

Les informations fournies dans la section « A propos du livre » peuvent faire référence à une autre édition de ce titre.

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Titre : Embedded Memories for Nano-scale VLSIs
Éditeur : Springer-Verlag New York Inc.
Date d'édition : 2010
Reliure : Couverture souple
Etat : New

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Etat : New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides a comprehensive and in-depth view on the state-of-the-art embedded memory technologiesGives an overview on the landscape and trend of embedded memory in various VLSI system designs, including high-performance microprocessor, low-power mob. N° de réf. du vendeur 4175026

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Taschenbuch. Etat : Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges. 396 pp. Englisch. N° de réf. du vendeur 9781441946942

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Taschenbuch. Etat : Neu. This item is printed on demand - Print on Demand Titel. Neuware -Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 396 pp. Englisch. N° de réf. du vendeur 9781441946942

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Taschenbuch. Etat : Neu. Druck auf Anfrage Neuware - Printed after ordering - Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges. N° de réf. du vendeur 9781441946942

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