Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany. Cet article n’est pas disponible.
Langue : anglais
Edité par CRC Press, 1994
- Livre relié
- Neuf

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- Titre
- Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
- Auteur
- Iop Institute of Physics
- Éditeur
- CRC Press
- Année de publication
- 1994
- État de l'article
- New
- Type de livre
- book
- Reliure
- hardcover
- Langue
- anglais
- ISBN à 10 chiffres
- 075030295X
- ISBN à 13 chiffres
- 9780750302951
The 20th International Symposium on Gallium Arsenide and Related Compounds was held in Freiburg i. Br., Germany, from 29 August to 2 September 1993, and was attended by over 300 participants drawn from leading industrial and academic research centres worldwide.
The subject matter of the meeting dealt not only with the current research into growth and characterization of materials and devices, but also with the development of high speed electronic devices and their practical application. Topics covered by the invited papers include ultrafast GaAs transistors and integrated circuits, novel laser diodes and tunneling devices. Chapters are divided by type of device, methods of growth, characterization and processing, and by materials' structure. The final chapter once again contains the late news papers which incorporate the most important of recent results and developments that are worthy of inclusion in this peer reviewed volume.
The subject matter of the meeting dealt not only with the current research into growth and characterization of materials and devices, but also with the development of high speed electronic devices and their practical application. Topics covered by the invited papers include ultrafast GaAs transistors and integrated circuits, novel laser diodes and tunneling devices. Chapters are divided by type of device, methods of growth, characterization and processing, and by materials' structure. The final chapter once again contains the late news papers which incorporate the most important of recent results and developments that are worthy of inclusion in this peer reviewed volume.
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Présentation de l'éditeur
Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
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