High-Speed Devices and Circuits with THz Applications

Jung Han Choi

ISBN 10: 1138071587 / ISBN 13: 9781138071582

Edité par CRC Press, 2017

A propos de cet article

nach der Bestellung gedruckt Neuware - Printed after ordering - This book covers the latest high-speed data rate connectivity technologies, discusses THz sensing and imaging devices based on nano devices and materials, describes SOI multigate nanowire FETs, and explains the theory underpinning nanoscale nanowire MOSFETs, simulation methods, and their results. It explores the physics of the SiGe heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications. It also details aspects of THz IC design using Si CMOS devices, including experimental setups for measurements, detection methods, and more.

N° de réf. du vendeur 9781138071582

Détails bibliographiques

• Titre: High-Speed Devices and Circuits with THz Applications
• Éditeur: CRC Press
• Date de parution: 2017
• Langue: anglais
• ISBN à 10 chiffres: 1138071587
• ISBN à 13 chiffres: 9781138071582
• Reliure: Taschenbuch
• État de l'article: Neu
• Dimensions: 234 L x 156 H x 14 P (en millimètres) 234 millimètres de largeur par 156 millimètres de hauteur par 14 millimètres de profondeur
• Poids: 404 grammes

A propos de ce titre

Synopsis

This book covers the latest high-speed data rate connectivity technologies, discusses THz sensing and imaging devices based on nano devices and materials, describes SOI multigate nanowire FETs, and explains the theory underpinning nanoscale nanowire MOSFETs, simulation methods, and their results. It explores the physics of the SiGe heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications. It also details aspects of THz IC design using Si CMOS devices, including experimental setups for measurements, detection methods, and more.

À propos de l?auteur

Jung Han Choi holds a BS and MS from the Sogang University, Seoul, Korea, and Dr.-Ing from the Technische Universität München, Germany. He currently works on high-data-bit-rate transmitter and receiver circuits, active/passive device modeling, and network analyzer measurement at the Fraunhofer Heinrich-Hertz Institute, Berlin, Germany. He previously served as a research scientist in the Institute for High-Frequency Engineering at the Technische Universität München, and was with the Samsung Advanced Institute of Technology and the Samsung Digital Media and Communication Research Center. In 2003, he received the EEEfCOM Innovation Prize for his contribution to the development of a high-speed receiver circuit.