High-Speed Devices and Circuits with THz Applications

Jung Han Choi

ISBN 10: 1466590114 / ISBN 13: 9781466590113

Edité par Taylor & Francis Inc Jul 2014, 2014

A propos de cet article

Neuware - Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications.Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

N° de réf. du vendeur 9781466590113

Détails bibliographiques

• Titre: High-Speed Devices and Circuits with THz Applications
• Éditeur: Taylor & Francis Inc Jul 2014
• Date de parution: 2014
• Langue: anglais
• ISBN à 10 chiffres: 1466590114
• ISBN à 13 chiffres: 9781466590113
• Reliure: Buch
• État de l'article: Neu
• Dimensions: 237 L x 161 H x 19 P (en millimètres) 237 millimètres de largeur par 161 millimètres de hauteur par 19 millimètres de profondeur
• Poids: 526 grammes

A propos de ce titre

Synopsis

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

• Discusses THz sensing and imaging devices based on nano devices and materials
• Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
• Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
• Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications
• Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more

An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

À propos de l?auteur

Jung Han Choi holds a BS and MS from the Sogang University, Seoul, Korea, and Dr.-Ing from the Technische Universität München, Germany. He currently works on high-data-bit-rate transmitter and receiver circuits, active/passive device modeling, and network analyzer measurement at the Fraunhofer Heinrich-Hertz Institute, Berlin, Germany. He previously served as a research scientist in the Institute for High-Frequency Engineering at the Technische Universität München, and was with the Samsung Advanced Institute of Technology and the Samsung Digital Media and Communication Research Center. In 2003, he received the EEEfCOM Innovation Prize for his contribution to the development of a high-speed receiver circuit.