Very High Speed MOS Devices

Kohyama, Susumu, editor:

Edité par Clarendon Press, Oxford, 1990

A propos de cet article

orig.cloth Binding corner bumps,two small ink marks to bottom page-edge,VG. Textual photos & diagrams 24x16cm, xii,528 pp Contents: Introductory Remarks; Foundations & Physics of MOS Devices; Process Technology; Process Integration for MOS Devices; BiCMOS Devices; Simulation Technology; MOS Logic Devices; MOS Memory Devices; Future Directions & Technical Issues of MOS Devices. Binding corner bumps,two small ink marks to bottom page-edge,VG. N° de réf. du vendeur 007099

Détails bibliographiques

Titre : Very High Speed MOS Devices

Éditeur : Clarendon Press, Oxford

Date d'édition : 1990

Reliure : Hardcover