MODELING NANOWIRE AND DOUBLE-GATE JUNCTIONLESS FIELD-EFFECT TRANSISTORS

Farzan Jazaeri

ISBN 10: 1107162041 / ISBN 13: 9781107162044

Edité par Cambridge University Press, 2018

A propos de cet article

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Détails bibliographiques

Titre : MODELING NANOWIRE AND DOUBLE-GATE ...

Éditeur : Cambridge University Press

Date d'édition : 2018

Reliure : Couverture rigide

Etat : Brand New

A propos de ce titre

Synopsis :

A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.

À propos des auteurs:

Farzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors.

Jean-Michel Sallese is a Senior Scientist at the Ecole Polytechnique Fédérale de Lausanne. He specialises in the analytical modeling of bulk and multigate field-effect transistors.