Operation and Modeling of the MOS Transistor

Tsividis, Yannis

ISBN 10: 0195170148 / ISBN 13: 9780195170146

Edité par Oxford University Press, 2003

A propos de cet article

New book, never read. Pages clean and crisp, spine unbroken. Oversized book, may incur additional shipping charges. 0424A. N° de réf. du vendeur A0424-015

Détails bibliographiques

Titre : Operation and Modeling of the MOS Transistor

Éditeur : Oxford University Press

Date d'édition : 2003

Reliure : Hardcover

Etat : New

Edition : 2nd Edition

A propos de ce titre

Synopsis :

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
.Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
.Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
.New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
.Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."

Présentation de l'éditeur:

This is a textbook for advanced semiconductor and microelectronic chip design course that follow the course where Allen/Holberg is used. It provides unified treatment of the operation and modelling of the MOS transistor.