Operation and Modeling of the Mos Transistor, Third Edtion International Edition

Tsividis, Yannis; Mcandrew, Colin

ISBN 10: 0199829837 / ISBN 13: 9780199829835

Edité par Oxford University Press, USA, 2012

A propos de cet article

Unread book in perfect condition.

N° de réf. du vendeur 20071274

Détails bibliographiques

• Titre: Operation and Modeling of the Mos Transistor, Third Edtion International Edition
• Éditeur: Oxford University Press, USA
• Date de parution: 2012
• Langue: anglais
• ISBN à 10 chiffres: 0199829837
• ISBN à 13 chiffres: 9780199829835
• Reliure: Couverture souple
• Édition: 3ème Édition
• État de l'article: As New

A propos de ce titre

Synopsis

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.

À propos de l?auteur

Yannis Tsividis is Charles Batchelor Professor of Electrical Engineering at Columbia University. His work with MOS transistors began in 1975 as part of his Ph.D. work at the University of California, Berkeley, in the context of the design and fabrication of the first fully-integrated MOS operational amplifier. He is a Fellow of IEEE. Among his awards are the 1984 IEEE W. R. G. Baker Prize for the best IEEE publication and the 2003 IEEE International Solid-State Circuits Conference Outstanding Paper Award.

Colin McAndrew became involved with modeling semiconductor devices in 1987 and has contributed to the development of models for MOS, bipolar, and passive devices. He developed the backward-propagation-of-variation (BPV) technique for statistical modeling and has been a primary advocate of the use of Verilog-A and compilers for device modeling. He has a Ph.D. from the University of Waterloo, works at Freescale Semiconductor, and is a Fellow of the IEEE.