THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology. Cet article n’est pas disponible.
Langue : anglais
Edité par LAP LAMBERT Academic Publishing, 2010
- Livre broché
- Neuf
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A propos de cet article
THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology | Rimoon Agaiby | Taschenbuch | 176 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838363325 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.
N° de réf. du vendeur 101097458
- Titre
- THE RELIABILITY OF STRAINED SI MOSFETS ON VARIED TECHNOLOGY PLATFORMS | Reliability of Advanced Si Technology
- Auteur
- Rimoon Agaiby
- Éditeur
- LAP LAMBERT Academic Publishing
- Année de publication
- 2010
- État de l'article
- Neu
- Reliure
- Taschenbuch
- Langue
- anglais
- ISBN à 10 chiffres
- 3838363329
- ISBN à 13 chiffres
- 9783838363325
- Poids de l'article
- 280 grammes
- Dimensions
- 220 x 150 x 12 mm
- Catalogues du vendeur
- Bücher
The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.
« Synopsis » peut appartenir à une autre édition de cet ouvrage.
Présentation de l'éditeur
The reliability of strained Si devices on several technology platforms has been investigated, highlighting the advantages and disadvantages in each case. The devices had biaxial strain induced through the use of a SiGe strain relaxed buffer or uniaxial strain induced through the use of strained nitride liners or stress memorisation. Since there is much literature demonstrating the benefits of using strain engineering to enhance drive current and speed, the aim of this thesis has been to present several aspects of device reliability that have not been studied previously and to demonstrate the need for significantly more research.
« A propos de ce titre » peut appartenir à une autre édition de cet ouvrage.